通过轨道电流感应转矩在Ti/Ta (Pt)/CoFeB/MgO结构中提高磁化开关效率

IF 19 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Functional Materials Pub Date : 2025-04-24 DOI:10.1002/adfm.202425932
So y. Shin, Donghyeon Han, Soogil Lee, Byong-Guk Park
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引用次数: 0

摘要

自旋轨道转矩(SOT)是由自旋霍尔效应引起的自旋电流产生的,可以实现有效的磁化开关。然而,为了在自旋电子器件中实际应用,必须减小开关电流。最近的研究表明,在各种过渡金属中,轨道霍尔电导率远远大于自旋霍尔电导率,这促使人们研究利用它来提高SOT的开关效率。尽管对轨道电流进行了广泛的研究,但尚未有证据表明轨道电流诱导转矩(OT)超过了传统的SOT。本文证明了引入Ti作为轨道电流源可以显著降低垂直磁化CoFeB的开关电流。在Ti/Ta (Pt)/CoFeB/MgO结构中,OT来源于Ti中产生的轨道电流,随后通过薄的Ta (Pt)层转化为自旋电流。在Ti/Ta(或Pt)/CoFeB/MgO中,OT诱导的开关电流比传统的Ta/CoFeB/MgO结构低约25%。谐波霍尔测量证实了这种增强,表明Ti/Ta/CoFeB/MgO结构的有效自旋霍尔角为0.060,超过了Ta/CoFeB/MgO结构的有效自旋霍尔角(0.038)。这些发现为利用轨道电流开发节能自旋电子器件铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Enhanced Magnetization Switching Efficiency via Orbital-Current-Induced Torque in Ti/Ta (Pt)/CoFeB/MgO Structures

Spin-orbit torque (SOT), arising from spin currents induced by the spin Hall effect, enables the efficient electrical switching of magnetization. However, for practical application in spintronic devices, the switching current must be reduced. Recent studies have shown that the orbital Hall conductivity is much larger than the spin Hall conductivity in various transition metals, prompting investigations to exploit it to enhance SOT switching efficiency. Despite extensive research on orbital currents, a demonstration showing that orbital-current-induced torque (OT) surpassed conventional SOT has yet to be reported. In this Article, it is demonstrated that introducing Ti as an orbital current source significantly reduces the switching current of perpendicularly magnetized CoFeB. In Ti/Ta (Pt)/CoFeB/MgO structures, the OT originates from orbital currents generated in the Ti and subsequent conversion into spin currents via the thin Ta (Pt) layer. The OT-induced switching current in Ti/Ta (or Pt)/CoFeB/MgO is ∼25% lower than that of a conventional SOT structure of Ta/CoFeB/MgO. This enhancement was confirmed by harmonic Hall measurements, showing an effective spin Hall angle of 0.060 in the Ti/Ta/CoFeB/MgO structure, exceeding that of the Ta/CoFeB/MgO structure (0.038). These findings pave the way for utilizing orbital currents in the development of energy efficient spintronic devices.

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来源期刊
Advanced Functional Materials
Advanced Functional Materials 工程技术-材料科学:综合
CiteScore
29.50
自引率
4.20%
发文量
2086
审稿时长
2.1 months
期刊介绍: Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.
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