单分子反应的作用光谱学。实验和理论

IF 8.7 2区 工程技术 Q1 CHEMISTRY, PHYSICAL Progress in Surface Science Pub Date : 2015-05-01 DOI:10.1016/j.progsurf.2014.12.001
Y. Kim , K. Motobayashi , T. Frederiksen , H. Ueba , M. Kawai
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引用次数: 78

摘要

本文综述了Kawai等近十年来利用扫描隧道显微镜(STM)研究金属表面单分子作用光谱(AS)的几个有代表性的实验结果。描述了观察STM-AS的实验过程。简要介绍了低温STM和实验设置,然后介绍了如何确定反应的起始偏置电压,如何测量与反应相关的电流变化以及如何观察单分子反应的AS的关键实验技术。本文给出了振动催化的反式-2-丁烯分子向1.3-丁二烯分子的化学转化和单个顺式-2-丁烯分子在Pd(11)上四个等效方向上的旋转运动的实验结果。从运动中获得的能谱比用STM的非弹性电子隧道能谱更清楚地检测到振动模式。它是一种有用的新型单分子振动光谱。水二聚体在Pt(1111)上的横向跳跃作为一个新颖的例子被提出。在as中检测到几种不同的振动模式作为阈值。从氢键供体或受体分子在水二聚体中的吸附几何角度出发,从对AS的分析中确定了振动模式的分配。利用非弹性隧穿电流诱导的单分子反应的单吸附共振模型,提出了STM-AS的一般理论,即反应速率或产率作为偏置电压的函数。推导出反应速率R(V)和Y(V)的公式,即每电子反应产率Y(V)=eR(V)/I。它提供了一个通用的框架来分析任何振动介导的单一吸附在金属表面的反应。给出了数值例子来证明振动产生率和Y(V)在不同近似水平上的一般特征,并展示了状态的振动密度的有效展宽(如高斯函数或洛伦兹函数所描述的)如何在Y(V)中表现出来,该Y(V)接近与负责反应的振动激发相对应的阈值偏压。对于各种类型的初等过程,明确地导出了Y(V)的前因子。我们的Y(V)的一般公式也强调了在两个偏压极性下观察Y(V)的必要性,这可以为在振动能量范围内靠近费米能级的吸附态的投影密度提供额外的见解。该理论应用于分析实验结果的一些亮点:Xe转移,单个CO分子在Pd(110)上的跳跃,单个二甲基二硫化物(CH3S)2的解离和解离产物(即单个甲基硫代CH3S)在Cu(111)上的跳跃。它强调,在两个偏极性下观察Y(V)使我们能够在费米水平上对分子排列有一定的了解。
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Action spectroscopy for single-molecule reactions – Experiments and theory

We review several representative experimental results of action spectroscopy (AS) of single molecules on metal surfaces using a scanning tunneling microscope (STM) by M. Kawai’s group over last decade. The experimental procedures to observe STM-AS are described. A brief description of a low-temperature STM and experimental setup are followed by key experimental techniques of how to determine an onset bias voltage of a reaction and how to measure a current change associated with reactions and finally how to observe AS for single molecule reactions. The experimental results are presented for vibrationally mediated chemical transformation of trans-2-butene to 1.3-butadiene molecule and rotational motion of a single cis-2-butene molecule among four equivalent orientations on Pd(1 1 0). The AS obtained from the motion clearly detects more vibrational modes than inelastic electron tunneling spectroscopy with an STM. AS is demonstrated as a useful and novel single molecule vibrational spectroscopy. The AS for a lateral hopping of water dimer on Pt(1 1 1) is presented as an example of novelty. Several distinct vibrational modes are detected as the thresholds in the AS. The assignment of the vibrational modes determined from the analysis of the AS is made from a view of the adsorption geometry of hydrogen-bond donor or acceptor molecules in water dimer.

A generic theory of STM-AS, i.e., a reaction rate or yield as a function of bias voltage, is presented using a single adsorbate resonance model for single molecule reactions induced by the inelastic tunneling current. Formulas for the reaction rate R(V) and Y(V), i.e., reaction yield per electron Y(V)=eR(V)/I are derived. It provides a versatile framework to analyze any vibrationally mediated reactions of single adsorbates on metal surfaces. Numerical examples are presented to demonstrate generic features of the vibrational generation rate and Y(V) at different levels of approximations and to show how the effective broadening of the vibrational density of states (as described by Gaussian or Lorentzian functions) manifest themselves in Y(V) near the threshold bias voltage corresponding to a vibrational excitation responsible for reactions. A prefactor of Y(V) is explicitly derived for various types of elementary processes. Our generic formula of Y(V) also underlines the need to observe Y(V) at both bias voltage polarities, which can provide additional insight into the adsorbate projected density of states near the Fermi level within a span of the vibrational energy.

The theory is applied to analysis of some highlights of the experimental results: Xe transfer, hopping of a single CO molecule on Pd(1 1 0), a dissociation of a single dimethyl disulfide (CH3S)2 and a hopping of a dissociated product, i.e., single methyl thiolate CH3S on Cu(1 1 1). It underlines that an observation of Y(V) at both bias polarities permits us to certain insight into the molecular alignment with respect to the Fermi level.

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来源期刊
Progress in Surface Science
Progress in Surface Science 工程技术-物理:凝聚态物理
CiteScore
11.30
自引率
0.00%
发文量
10
审稿时长
3 months
期刊介绍: Progress in Surface Science publishes progress reports and review articles by invited authors of international stature. The papers are aimed at surface scientists and cover various aspects of surface science. Papers in the new section Progress Highlights, are more concise and general at the same time, and are aimed at all scientists. Because of the transdisciplinary nature of surface science, topics are chosen for their timeliness from across the wide spectrum of scientific and engineering subjects. The journal strives to promote the exchange of ideas between surface scientists in the various areas. Authors are encouraged to write articles that are of relevance and interest to both established surface scientists and newcomers in the field.
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Editorial Board Current perspective towards a general framework to describe and harness friction at the nanoscale Time-resolved photoemission electron microscopy of semiconductor interfaces Editorial Board Structural dynamics in atomic indium wires on silicon: From ultrafast probing to coherent vibrational control
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