{"title":"氮化镓基蓝色led及氮化镓金属有机气相外延及相关材料的发展","authors":"Hiroshi Amano","doi":"10.1016/j.pcrysgrow.2016.04.006","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy </span>electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of </span>nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. For more detailed information, please read the two original papers.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 126-135"},"PeriodicalIF":4.5000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.006","citationCount":"27","resultStr":"{\"title\":\"Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials\",\"authors\":\"Hiroshi Amano\",\"doi\":\"10.1016/j.pcrysgrow.2016.04.006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span><span>This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy </span>electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of </span>nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. For more detailed information, please read the two original papers.</p></div>\",\"PeriodicalId\":409,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization of Materials\",\"volume\":\"62 2\",\"pages\":\"Pages 126-135\"},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2016-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.006\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization of Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0960897416300092\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897416300092","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 27
摘要
本文结合了两篇论文，“诺贝尔奖演讲:低温沉积缓冲层在蓝宝石上生长GaN和通过Mg掺杂和低能电子束辐照实现p型GaN”，Mod. Phys。“氮化物的MOCVD”，Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683 - 704,2015。欲了解更多详细信息，请阅读两篇论文原文。
Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials
This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. For more detailed information, please read the two original papers.
期刊介绍：
Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research.
Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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