孤对硫族半导体的化学有序性和电子性质

IF 9.1 2区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR Progress in Solid State Chemistry Pub Date : 2019-06-01 DOI:10.1016/j.progsolidstchem.2019.04.001
Vineet Sharma , Sunanda Sharda , Neha Sharma , S.C. Katyal , Pankaj Sharma
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引用次数: 28

摘要

硫族化合物孤对半导体材料在热电学、相变存储器、拓扑绝缘体等方面具有重要的应用前景。为了研究这些多用途的孤对半导体,世界各地的研究人员研究了不同的电子特性。在接受这些半导体材料的应用时,对这些半导体材料的散装和薄膜的电子特性(如暗和光导电性、光敏性、载流子浓度、载流子类型、弛豫时间和热功率)进行分析是主要成分。本文综述了几种二元、三元和四元孤对硫族化合物体系的电子性质。电子性质一般是根据体系中的化学顺序来讨论的。本文还对传导机理的一些理论背景作了简要的讨论,供本领域的新研究者参考。概述了硫族半导体材料的潜在应用。
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Chemical ordering and electronic properties of lone pair chalcogenide semiconductors

Chalcogenide lone pair semiconducting materials are important materials due to their prospective applications in thermoelectrics, phase change memories, topological insulators etc. Investigating these lone pair semiconductors for versatile applications, different electronic properties were studied by researchers world-wide. Analyses of these semiconducting materials in bulk and thin films for electronic properties like dark and photo-conductivity, photosensitivity, carrier concentration, carrier type, relaxation time and thermopower are the major constituents while accepting them for applications. This review stresses on the electronic properties of several binary, ternary and quaternary lone pair chalcogenide systems. The electronic properties are generally discussed on the basis of chemical ordering in system. A brief discussion on some theoretical background of conduction mechanism has also been incorporated for new researchers in this field. Potential applications of chalcogenide semiconducting materials have been outlined.

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来源期刊
Progress in Solid State Chemistry
Progress in Solid State Chemistry 化学-无机化学与核化学
CiteScore
14.10
自引率
3.30%
发文量
12
期刊介绍: Progress in Solid State Chemistry offers critical reviews and specialized articles written by leading experts in the field, providing a comprehensive view of solid-state chemistry. It addresses the challenge of dispersed literature by offering up-to-date assessments of research progress and recent developments. Emphasis is placed on the relationship between physical properties and structural chemistry, particularly imperfections like vacancies and dislocations. The reviews published in Progress in Solid State Chemistry emphasize critical evaluation of the field, along with indications of current problems and future directions. Papers are not intended to be bibliographic in nature but rather to inform a broad range of readers in an inherently multidisciplinary field by providing expert treatises oriented both towards specialists in different areas of the solid state and towards nonspecialists. The authorship is international, and the subject matter will be of interest to chemists, materials scientists, physicists, metallurgists, crystallographers, ceramists, and engineers interested in the solid state.
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