Electrodeposited NiFe2O4/Cu2O heterostructure thin films with enhanced photocurrent generation

In comparison with single-phase materials, heterostructures have been known for superior water splitting applications. In this study, Cu₂O and NiFe₂O₄ are chosen to fabricate thin film heterostructures. Cu₂O is electrodeposited at 60 °C for 5 min on ITO-coated glass substrates using three-electrode system. After deposition, the phase formation is confirmed using powder x-ray diffraction studies. The NiFe₂O₄ (NFO) thin films are deposited using RF sputtering method at room temperature for 2 h on Cu₂O/ITO substrates to obtain NFO/Cu₂O/ITO Type-II heterostructure. The scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) cross-sectional images show that the thickness of NFO layer is 120 nm and Cu₂O layer is 1.5 µm. The photocurrent density of Cu₂O on ITO is 0.08 ± 0.002 mA/cm², and it increased to 0.12 ± 0.002 mA/cm² after adding NFO layer on Cu₂O film due to Type-II heterojunction formation.