使用非易失性存储器的可配置三态混合方案的物理不可克隆函数

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY IEEE Open Journal of Nanotechnology Pub Date : 2021-02-09 DOI:10.1109/OJNANO.2021.3058169
Jiang Li;Yijun Cui;Chongyan Gu;Chenghua Wang;Weiqiang Liu;Fabrizio Lombardi
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引用次数: 7

摘要

物理不可克隆函数(PUF)是一种很有前途的低成本硬件安全原语。纳米技术的最新进展为纳米级PUF电路提供了新的机会。电阻式随机存取存储器(RRAM)具有成本低、不易挥发、易于与CMOS集成等优点,在纳米级电路中得到广泛应用。提出了一种基于单晶体管-单rram (1T1R)单元的新型三态混合PUF (TH-PUF)设计;该单元可以配置为两个弱PUF和一个强PUF使用很少的控制信号。为了评估PUF设计,采用了UMC 65纳米技术的紧凑型RRAM模型。仿真结果表明,与完整的CMOS puf相比,所提出的TH-PUF具有良好的唯一性、可靠性和更高的栅极可用性。TH-PUF的挑战响应对(CRPs)数量大于其他基于rram的puf。此外,TH-PUF比传统的PUF设计更能抵抗建模机器学习攻击。
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A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory
The physical unclonable function (PUF) is a promising low-cost hardware security primitive. Recent advances in nanotechnology have provided new opportunities for nanoscale PUF circuits. The resistive random access memory (RRAM) is extensively used in nanoscale circuits due to its low cost, non-volatility and easy integration with CMOS. This paper proposes a novel tristate hybrid PUF (TH-PUF) design based on a one-transistor-one-RRAM (1T1R) cell; this cell can be configured into two weak PUFs and a strong PUF using few control signals. To assess the proposed PUF design, a compact RRAM model at UMC 65 nm technology is employed. Simulation results show that the proposed TH-PUF achieves good uniqueness, reliability as well as a higher gate usability compared with an entire CMOS PUFs. The number of challenge response pairs (CRPs) of the proposed TH-PUF is larger than other RRAM-based PUFs. Moreover, the TH-PUF is more resistant to a modeling machine learning attack than traditional PUF designs.
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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