{"title":"特邀编辑TDMR IIRW专区","authors":"Francesco Maria Puglisi","doi":"10.1109/TDMR.2023.3306195","DOIUrl":null,"url":null,"abstract":"The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"307-308"},"PeriodicalIF":2.5000,"publicationDate":"2023-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10242179/10242194.pdf","citationCount":"0","resultStr":"{\"title\":\"Guest Editorial TDMR IIRW Special Section\",\"authors\":\"Francesco Maria Puglisi\",\"doi\":\"10.1109/TDMR.2023.3306195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"23 3\",\"pages\":\"307-308\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2023-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/iel7/7298/10242179/10242194.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10242194/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10242194/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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