Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang
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It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI<sub>3</sub> nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m<sup>−2</sup> and a peak current density of 10.8 cd A<sup>−1</sup>). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T<sub>50</sub> of 20 min (at current density of 25 mA cm<sup>−2</sup>), outperforming the untreated devices (T<sub>50</sub> ~ 6 min). \n</p><figure><div><div><div><picture><source><img></source></picture></div></div></div></figure></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":null,"pages":null},"PeriodicalIF":31.6000,"publicationDate":"2022-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-022-00813-9.pdf","citationCount":"19","resultStr":"{\"title\":\"Surface Treatment of Inorganic CsPbI3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness\",\"authors\":\"Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang\",\"doi\":\"10.1007/s40820-022-00813-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. 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引用次数: 19
摘要
在过去的十年中,金属卤化物钙钛矿的显著发展使它们有望成为下一代光电材料。特别是无机钙钛矿的纳米晶体(NCs)在发光和显示应用中表现出优异的性能。然而,nc表面缺陷的存在会对其在器件中的性能产生负面影响。在此,我们报道了使用碘化胍(GuI)对CsPbI3纳米晶体进行相容的面部后处理。研究发现,由于碘离子和胍离子的有益贡献,GuI处理有效地钝化了纳米碳表面的卤化物空位缺陷,同时提供了有效的表面保护和激子约束。结果表明,处理后的CsPbI3纳米晶体薄膜的发光和电荷输运性能显著增强,制备出高性能发光二极管,最高外量子效率为13.8%,亮度高(峰值亮度为7039 cd m−2,峰值电流密度为10.8 cd a−1)。EQE比未处理设备的性能高出三倍以上(EQE: 3.8%)。处理后器件的工作半衰期也显著提高,T50为20 min(电流密度为25 mA cm−2),优于未处理器件(T50 ~ 6 min)。
Surface Treatment of Inorganic CsPbI3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness
The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI3 nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI3 nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m−2 and a peak current density of 10.8 cd A−1). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min (at current density of 25 mA cm−2), outperforming the untreated devices (T50 ~ 6 min).
期刊介绍:
Nano-Micro Letters is a peer-reviewed, international, interdisciplinary and open-access journal that focus on science, experiments, engineering, technologies and applications of nano- or microscale structure and system in physics, chemistry, biology, material science, pharmacy and their expanding interfaces with at least one dimension ranging from a few sub-nanometers to a few hundreds of micrometers. Especially, emphasize the bottom-up approach in the length scale from nano to micro since the key for nanotechnology to reach industrial applications is to assemble, to modify, and to control nanostructure in micro scale. The aim is to provide a publishing platform crossing the boundaries, from nano to micro, and from science to technologies.