相变记忆材料的微观结构表征、相变和器件应用。

IF 7.4 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Science and Technology of Advanced Materials Pub Date : 2023-08-30 eCollection Date: 2023-01-01 DOI:10.1080/14686996.2023.2252725
Kai Jiang, Shubing Li, Fangfang Chen, Liping Zhu, Wenwu Li
{"title":"相变记忆材料的微观结构表征、相变和器件应用。","authors":"Kai Jiang,&nbsp;Shubing Li,&nbsp;Fangfang Chen,&nbsp;Liping Zhu,&nbsp;Wenwu Li","doi":"10.1080/14686996.2023.2252725","DOIUrl":null,"url":null,"abstract":"<p><p>Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.</p>","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"24 1","pages":"2252725"},"PeriodicalIF":7.4000,"publicationDate":"2023-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ftp.ncbi.nlm.nih.gov/pub/pmc/oa_pdf/ed/fc/TSTA_24_2252725.PMC10512918.pdf","citationCount":"1","resultStr":"{\"title\":\"Microstructure characterization, phase transition, and device application of phase-change memory materials.\",\"authors\":\"Kai Jiang,&nbsp;Shubing Li,&nbsp;Fangfang Chen,&nbsp;Liping Zhu,&nbsp;Wenwu Li\",\"doi\":\"10.1080/14686996.2023.2252725\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.</p>\",\"PeriodicalId\":21588,\"journal\":{\"name\":\"Science and Technology of Advanced Materials\",\"volume\":\"24 1\",\"pages\":\"2252725\"},\"PeriodicalIF\":7.4000,\"publicationDate\":\"2023-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ftp.ncbi.nlm.nih.gov/pub/pmc/oa_pdf/ed/fc/TSTA_24_2252725.PMC10512918.pdf\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science and Technology of Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1080/14686996.2023.2252725\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2023/1/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science and Technology of Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/14686996.2023.2252725","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2023/1/1 0:00:00","PubModel":"eCollection","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 1

摘要

相变存储器(PCM)是近年来发展起来的一种新型非易失性存储器技术,是计算机系统中的存储类存储器。此外,PCM在非冯-诺依曼计算中的应用,如神经形态计算和内存计算,也在研究中。尽管基于PCM的器件已经被广泛研究,但关于相变器件的电学、热学和结构动力学的几个问题仍然存在。在这篇文章中,针对PCM器件,对PCM材料进行了全面的综述,包括支撑读写操作的主要PCM器件力学、基于物理的建模举措以及在纳米级PCM器件中检测的许多特征的实验表征。最后,这篇综述将对一些尚未解决的挑战提出预测,并强调需要进一步研究的研究领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Microstructure characterization, phase transition, and device application of phase-change memory materials.

Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.

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来源期刊
Science and Technology of Advanced Materials
Science and Technology of Advanced Materials 工程技术-材料科学:综合
CiteScore
10.60
自引率
3.60%
发文量
52
审稿时长
4.8 months
期刊介绍: Science and Technology of Advanced Materials (STAM) is a leading open access, international journal for outstanding research articles across all aspects of materials science. Our audience is the international community across the disciplines of materials science, physics, chemistry, biology as well as engineering. The journal covers a broad spectrum of topics including functional and structural materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications. Of particular interest are research papers on the following topics: Materials informatics and materials genomics Materials for 3D printing and additive manufacturing Nanostructured/nanoscale materials and nanodevices Bio-inspired, biomedical, and biological materials; nanomedicine, and novel technologies for clinical and medical applications Materials for energy and environment, next-generation photovoltaics, and green technologies Advanced structural materials, materials for extreme conditions.
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