非线性温度相关拉曼参数变化:Fano介入系统的识别

IF 23.9 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Physics Reports Pub Date : 2023-10-14 DOI:10.1016/j.physrep.2023.09.007
Chanchal Rani Ph.D. , Manushree Tanwar Ph.D. , Tanushree Ghosh Ph.D. , Suchita Kandpal Ph.D. , Shailendra K. Saxena Ph.D. , Rajesh Kumar Ph.D.
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引用次数: 1

摘要

拉曼光谱自1928年发现以来,几乎所有来自多学科研究领域的研究人员都留下了数百万个脚印,并已成为一种极其重要的分析工具。近年来,它还展示了在微观层面获取材料中非传统物理过程信息的能力。例如,温度/热效应在拉曼光谱上的表现。在元素半导体(Si,Ge)、二元材料(GaAs,Si-Ge)、二维层状材料(石墨烯、MoS2、WS2)和过渡金属氧化物(TiO2,Fe2O3)中,使用拉曼光谱在各种材料中广泛探索了传统上称为非谐效应的效应。非谐波效应表现为拉曼峰位置的偏移和拉曼光谱的加宽,这分别是声子能量和寿命变化的结果。对于温度相关的拉曼光谱,已有许多研究遵循Balkanski的声子湮灭理论,但也有一些材料不仅遵循传统的非谐趋势,而且随着温度的变化呈现出一些非线性趋势。石墨烯、重掺杂硅、薄膜和一些复杂材料等各种材料由于能带结构、掺杂浓度、薄膜厚度等原因,偏离了非谐理论,导致材料中的电子-声子相互作用或固有相变。拉曼光谱的温度相关非线性行为很少受到关注,需要进行广泛的研究。尽管与Balkanski的非谐理论不同的材料显示出电子-声子相互作用的优势,但在一定温度下也存在非谐效应,这也需要在一个透视框架中进行探索和总结。本文对这一较少接触区域的可用工作进行了详细回顾,以提供一种不同的方法来分析热扰动对拉曼线形状的影响。对不同材料范围的温度相关拉曼研究进行了汇编,并强调了任何观察到的与众所周知的非谐理论的偏差,并提供了这种偏差的可能原因。
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Non-linear temperature dependent Raman parametric changes: An identification of Fano intervened systems

Raman spectroscopy, since its discovery in 1928, left millions of footprints touching almost all researchers coming from multidisciplinary research areas and has established itself as an extremely important analytical tool. In recent times, it also has exhibited capabilities to get information about non-traditional physical processes in a material at microscopic levels. For example, the manifestation of temperature/thermal effect on a Raman spectrum. Conventionally termed anharmonic effect has been widely explored in various materials using Raman spectroscopy in elemental semiconductors (Si, Ge), binary materials (GaAs, Si-Ge), two-dimensional layered materials (Graphene, MoS 2, WS2), and transition metal oxides (TiO 2, Fe2O3). Anharmonic effects manifest themselves in terms of shift in Raman peak position and broadening in the Raman spectra as a consequence of change in phonon energy and lifetime respectively. A lot of studies are available for temperature dependent Raman spectra which followed the phonon annihilation theory of Balkanski, but there are some materials which do not follow the traditional anharmonic trend only, also show some nonlinear trend with temperature. Deviation from the anharmonic theory in various materials like graphene, heavily doped silicon, thin films and some complex materials raised due to various reasons such as band structure, doping concentration, thickness of the film, etc. which causes the electron–phonon interaction or inherent phase transition in the material. Temperature dependent nonlinear behavior of Raman spectra has been given a very less attention and requires a wide study. Although the materials which show divergence from Balkanski’s anharmonic theory, show the predominance of electron–phonon interaction but at certain temperature anharmonic effect also take part which also needs to be explored and summarized in a perspective framework. A detailed review of available work in this less touched area has been presented here so as to give a different approach to analyze the effect of thermal perturbations on Raman line-shape. A compilation of temperature dependent Raman study from different range of materials has been presented and any observed deviation from the well-known anharmonic theory has been highlighted and possible reason for such deviation has been provided.

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来源期刊
Physics Reports
Physics Reports 物理-物理:综合
CiteScore
56.10
自引率
0.70%
发文量
102
审稿时长
9.1 weeks
期刊介绍: Physics Reports keeps the active physicist up-to-date on developments in a wide range of topics by publishing timely reviews which are more extensive than just literature surveys but normally less than a full monograph. Each report deals with one specific subject and is generally published in a separate volume. These reviews are specialist in nature but contain enough introductory material to make the main points intelligible to a non-specialist. The reader will not only be able to distinguish important developments and trends in physics but will also find a sufficient number of references to the original literature.
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