二氧化硅的Ag Lα，硬x射线光电子能谱

IF 1.6 Q3 PHYSICS, CONDENSED MATTER Surface Science Spectra Pub Date : 2023-08-16 DOI:10.1116/6.0002801

Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, R. Ospina

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引用次数: 0

摘要

用硬x射线光电子能谱（HAXPES）对二氧化硅粉末进行了表征，并用Ag Lα（2984.2 eV）激发源。用铜双面胶带将样品固定在不锈钢样品支架上。获得了测量光谱、C1s、O1s、Si1s、SiKLL、Si2s和Si2p核心能级光谱。

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Silicon dioxide by Ag Lα, hard x-ray photoelectron spectroscopy

Silicon dioxide powder was characterized by hard x-ray photoelectron spectroscopy (HAXPES) with an Ag Lα (2984.2 eV) excitation source. The sample was fixed to a stainless-steel sample holder with copper double-sided adhesive tape. Survey spectrum, C 1s, O 1s, Si 1s, Si KLL, Si 2s, and Si 2p core levels spectra were acquired.

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