用共聚焦拉曼光谱分析蓝宝石衬底GaN外延层的界面应力

IF 3.5 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering Pub Date : 2021-03-22 DOI:10.1063/10.0003818
Zengqi Zhang, Zongwei Xu, Ying Song, Tao Liu, Bin Dong, J. Liu, H. Wang
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引用次数: 7

摘要

氮化镓(GaN)作为一种重要的宽带隙半导体,引起了人们的广泛关注。本文描述了使用共聚焦拉曼光谱通过使用405nm、532nm和638nm波长的激光器进行深度剖析来表征未掺杂的GaN、n型GaN和p型GaN。研究了蓝宝石衬底在不同焦深下的拉曼信号强度,分析了深度分辨率。基于GaN外延层E2H模的位移,对不同类型GaN的界面应力进行了表征和计算。结果表明,最大界面应力大致出现在GaN和蓝宝石衬底的接合处。GaN外延层和衬底之间的局部界面应力分析将非常有助于进一步推进GaN器件的应用。
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Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy
As an important wide-bandgap semiconductor, gallium nitride (GaN) has attracted considerable attention. This paper describes the use of confocal Raman spectroscopy to characterize undoped GaN, n-type GaN, and p-type GaN through depth profiling using 405-, 532-, and 638-nm wavelength lasers. The Raman signal intensity of the sapphire substrate at different focal depths is studied to analyze the depth resolution. Based on the shift of the E2H mode of the GaN epitaxial layer, the interfacial stress for different types of GaN is characterized and calculated. The results show that the maximum interfacial stress appears approximately at the junction of the GaN and the sapphire substrate. Local interfacial stress analysis between the GaN epitaxial layer and the substrate will be very helpful in furthering the applications of GaN devices.
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来源期刊
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering Engineering-Industrial and Manufacturing Engineering
CiteScore
6.50
自引率
0.00%
发文量
1379
审稿时长
14 weeks
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