聚合物侧壁转移光刻

IF 1.1 Q3 PHYSICS, MULTIDISCIPLINARY Journal of Physics Communications Pub Date : 2022-09-01 DOI:10.1088/2399-6528/ac8f18
Yi-Chen Lo, Xing Cheng
{"title":"聚合物侧壁转移光刻","authors":"Yi-Chen Lo, Xing Cheng","doi":"10.1088/2399-6528/ac8f18","DOIUrl":null,"url":null,"abstract":"This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.","PeriodicalId":47089,"journal":{"name":"Journal of Physics Communications","volume":" ","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polymeric sidewall transfer lithography\",\"authors\":\"Yi-Chen Lo, Xing Cheng\",\"doi\":\"10.1088/2399-6528/ac8f18\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.\",\"PeriodicalId\":47089,\"journal\":{\"name\":\"Journal of Physics Communications\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2022-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2399-6528/ac8f18\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2399-6528/ac8f18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

这项工作是为了展示一种低成本和节省时间的技术,通过将纳米级聚合物侧壁转移到衬底上来创建纳米沟槽。聚合物侧壁是通过在垂直模板上旋转涂覆聚合物溶液而沉积的垂直扩散层。通过改变溶液浓度或旋转涂布速度等工艺参数,可以改变侧壁的尺寸,从而改变图案转移后的纳米沟槽尺寸。在这项工作中,在将直线侧壁转移到衬底后,获得了约15 nm的高分辨率沟槽。除了直线侧壁图案外,这种方法还可以制作圆环形状的图案,包括圆形、正方形和同心圆正方形。由于具有各种形状的侧壁图案,该技术具有实现其他实际应用的潜力,例如制造15纳米的高分辨率纳米压印模具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Polymeric sidewall transfer lithography
This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Physics Communications
Journal of Physics Communications PHYSICS, MULTIDISCIPLINARY-
CiteScore
2.60
自引率
0.00%
发文量
114
审稿时长
10 weeks
期刊最新文献
Deriving measurement collapse using zeta function regularisation and speculative measurement theory Zinc oxide behavior in CO detection as a function of thermal treatment time Teleportation of a qubit using quasi-Bell states The n-shot classical capacity of the quantum erasure channel Anisotropic effects in the nondipole relativistic photoionization of hydrogen
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1