{"title":"ZnO基压敏陶瓷的合成与表征:烧结温度的影响","authors":"A. Bouchekhlal, M. Boulesbaa","doi":"10.1108/mi-01-2022-0005","DOIUrl":null,"url":null,"abstract":"\nPurpose\nThe purpose of this paper is to investigate the effects of the sintering temperature on the microstructural, morphological and electrical characteristics of Zinc oxide (ZnO)-based varistors.\n\n\nDesign/methodology/approach\nThis study used a conventional method to design and produce ZnO varistors by sintering ZnO powder with small amounts of various metal oxides. Furthermore, the effect of sintering temperature on varistor properties of (Bi, Co, Cr, Sb, Mn)-doped ZnO ceramics was investigated in the range of 1280–1350 °C.\n\n\nFindings\nThe obtained results showed an EB value of 2109.79 V/cm, a Vgb value of 0.831 V and a nonlinear coefficient (α) value of 19.91 for sample sintered at temperature of 1300 °C. In addition, the low value of tan δ at low frequency range confirmed that the grain boundaries created in 1300 °C sintering temperature were obviously good.\n\n\nOriginality/value\nBased on the previous research on the ZnO-based varistors, a thorough study was carried out on these components to improve their electrical characteristics. Thus, it is necessary that those varistors have low leakage current and low value of dissipation factor to ensure their good quality. High breakdown fields and nonlinearity coefficients are also required in such kind of components. The effect of sintering temperature on the varistor properties of the new compositions (zinc, bismuth, manganese, chrome, cobalt, antimony and silicon oxides)-doped ZnO ceramics was studied in the range of 1280–1350 °C. Also, the microstructure and the phase evolution of the samples sintered at various temperatures (1280 °C, 1300 °C, 1320 °C and 1350 °C) were investigated according to X-ray diffraction and scanning electron microscope measurements.\n","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":" ","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2022-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and characterization of ZnO based varistor ceramics: effect of sintering temperatures\",\"authors\":\"A. Bouchekhlal, M. Boulesbaa\",\"doi\":\"10.1108/mi-01-2022-0005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\nPurpose\\nThe purpose of this paper is to investigate the effects of the sintering temperature on the microstructural, morphological and electrical characteristics of Zinc oxide (ZnO)-based varistors.\\n\\n\\nDesign/methodology/approach\\nThis study used a conventional method to design and produce ZnO varistors by sintering ZnO powder with small amounts of various metal oxides. Furthermore, the effect of sintering temperature on varistor properties of (Bi, Co, Cr, Sb, Mn)-doped ZnO ceramics was investigated in the range of 1280–1350 °C.\\n\\n\\nFindings\\nThe obtained results showed an EB value of 2109.79 V/cm, a Vgb value of 0.831 V and a nonlinear coefficient (α) value of 19.91 for sample sintered at temperature of 1300 °C. In addition, the low value of tan δ at low frequency range confirmed that the grain boundaries created in 1300 °C sintering temperature were obviously good.\\n\\n\\nOriginality/value\\nBased on the previous research on the ZnO-based varistors, a thorough study was carried out on these components to improve their electrical characteristics. Thus, it is necessary that those varistors have low leakage current and low value of dissipation factor to ensure their good quality. High breakdown fields and nonlinearity coefficients are also required in such kind of components. The effect of sintering temperature on the varistor properties of the new compositions (zinc, bismuth, manganese, chrome, cobalt, antimony and silicon oxides)-doped ZnO ceramics was studied in the range of 1280–1350 °C. Also, the microstructure and the phase evolution of the samples sintered at various temperatures (1280 °C, 1300 °C, 1320 °C and 1350 °C) were investigated according to X-ray diffraction and scanning electron microscope measurements.\\n\",\"PeriodicalId\":49817,\"journal\":{\"name\":\"Microelectronics International\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2022-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics International\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1108/mi-01-2022-0005\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics International","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/mi-01-2022-0005","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Synthesis and characterization of ZnO based varistor ceramics: effect of sintering temperatures
Purpose
The purpose of this paper is to investigate the effects of the sintering temperature on the microstructural, morphological and electrical characteristics of Zinc oxide (ZnO)-based varistors.
Design/methodology/approach
This study used a conventional method to design and produce ZnO varistors by sintering ZnO powder with small amounts of various metal oxides. Furthermore, the effect of sintering temperature on varistor properties of (Bi, Co, Cr, Sb, Mn)-doped ZnO ceramics was investigated in the range of 1280–1350 °C.
Findings
The obtained results showed an EB value of 2109.79 V/cm, a Vgb value of 0.831 V and a nonlinear coefficient (α) value of 19.91 for sample sintered at temperature of 1300 °C. In addition, the low value of tan δ at low frequency range confirmed that the grain boundaries created in 1300 °C sintering temperature were obviously good.
Originality/value
Based on the previous research on the ZnO-based varistors, a thorough study was carried out on these components to improve their electrical characteristics. Thus, it is necessary that those varistors have low leakage current and low value of dissipation factor to ensure their good quality. High breakdown fields and nonlinearity coefficients are also required in such kind of components. The effect of sintering temperature on the varistor properties of the new compositions (zinc, bismuth, manganese, chrome, cobalt, antimony and silicon oxides)-doped ZnO ceramics was studied in the range of 1280–1350 °C. Also, the microstructure and the phase evolution of the samples sintered at various temperatures (1280 °C, 1300 °C, 1320 °C and 1350 °C) were investigated according to X-ray diffraction and scanning electron microscope measurements.
期刊介绍:
Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details.
Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are:
• Advanced packaging
• Ceramics
• Chip attachment
• Chip on board (COB)
• Chip scale packaging
• Flexible substrates
• MEMS
• Micro-circuit technology
• Microelectronic materials
• Multichip modules (MCMs)
• Organic/polymer electronics
• Printed electronics
• Semiconductor technology
• Solid state sensors
• Thermal management
• Thick/thin film technology
• Wafer scale processing.