量子等离子体中含氢杂质的电致Mathieu量子点能谱

M. Bahar
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引用次数: 0

摘要

本文研究了InxGaAs1-x/GaAs异质结构在量子等离子体中注入的含有中心氢杂质的电致Mathieu量子点(MQD)的能谱。探讨了外加电场、结构参数和等离子体屏蔽对含氢杂质MQD能级的影响。更一般的指数余弦屏蔽库仑(MGECSC)势被用来描述量子等离子体的相互作用。为了求解相关的薛定谔方程,采用了数值渐近迭代法。有效潜在参数的可实现值被考虑在内,并且为了特殊目的,还评估了这些参数的相互替代性。
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The Energy Spectra of Electric Induced Mathieu Quantum Dot with Hydrogenic Impurity Implanted in Quantum Plasma
In this study, the energy spectra of the electric induced Mathieu quantum dot (MQD), containing the central hydrogenic impurity, fabricated by heterostructure InxGaAs1-x/GaAs, implanted in quantum plasma is considered. The effects of the external electric field, structural parameters and plasma screening on the energy levels of the MQD with the hydrogenic impurity are probed. The more general exponential cosine screened Coulomb (MGECSC) potential is used to depict the quantum plasma interactions. In order to solve the related Schrödinger equation, the numerical asymptotic iteration method (AIM) is employed. Achievable values of the effective potential parameters are taken into consideration, and for special purposes, the alternative to each other of these parameters is also evaluated.
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