材料和尺寸对硅MEMS谐振腔径向轮廓模AlN的TCF、频率和Q的影响

Thi Dep Ha
{"title":"材料和尺寸对硅MEMS谐振腔径向轮廓模AlN的TCF、频率和Q的影响","authors":"Thi Dep Ha","doi":"10.1016/j.jnlest.2021.100120","DOIUrl":null,"url":null,"abstract":"<div><p>This paper investigates the effects of material and dimension parameters on the frequency splitting, frequency drift, and quality factor (<em>Q</em>) of aluminium nitride (AlN)-on-n-doped/pure silicon (Si) microelectromechanical systems (MEMS) disk resonators through analysis and simulation. These parameters include the crystallographic orientation, dopant, substrate thickness, and temperature. The resonators operate in the elliptical, higher order, and flexural modes. The simulation results show that i) the turnover points of the resonators exist at 55 ​°C, –50 ​°C, 40 ​°C, and –10 ​°C for n-doped silicon with the doping concentration of 2 ​× ​10<sup>19</sup> ​cm<sup>–3</sup> and the Si thickness of 3.5 ​μm, and these points are shifted with the substrate thickness and mode variations; ii) compared with pure Si, the modal-frequency splitting for n-doped Si is higher and increases from 5% to 10% for all studied modes; iii) <em>Q</em> of the resonators depends on the temperature and dopant. Therefore, the turnover, modal-frequency splitting, and <em>Q</em> of the resonators depend on the thickness and material of the substrate and the temperature. This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.</p></div>","PeriodicalId":53467,"journal":{"name":"Journal of Electronic Science and Technology","volume":"19 4","pages":"Article 100120"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.jnlest.2021.100120","citationCount":"0","resultStr":"{\"title\":\"Effects of material and dimension on TCF, frequency, and Q of radial contour mode AlN-on-Si MEMS resonators\",\"authors\":\"Thi Dep Ha\",\"doi\":\"10.1016/j.jnlest.2021.100120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper investigates the effects of material and dimension parameters on the frequency splitting, frequency drift, and quality factor (<em>Q</em>) of aluminium nitride (AlN)-on-n-doped/pure silicon (Si) microelectromechanical systems (MEMS) disk resonators through analysis and simulation. These parameters include the crystallographic orientation, dopant, substrate thickness, and temperature. The resonators operate in the elliptical, higher order, and flexural modes. The simulation results show that i) the turnover points of the resonators exist at 55 ​°C, –50 ​°C, 40 ​°C, and –10 ​°C for n-doped silicon with the doping concentration of 2 ​× ​10<sup>19</sup> ​cm<sup>–3</sup> and the Si thickness of 3.5 ​μm, and these points are shifted with the substrate thickness and mode variations; ii) compared with pure Si, the modal-frequency splitting for n-doped Si is higher and increases from 5% to 10% for all studied modes; iii) <em>Q</em> of the resonators depends on the temperature and dopant. Therefore, the turnover, modal-frequency splitting, and <em>Q</em> of the resonators depend on the thickness and material of the substrate and the temperature. This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.</p></div>\",\"PeriodicalId\":53467,\"journal\":{\"name\":\"Journal of Electronic Science and Technology\",\"volume\":\"19 4\",\"pages\":\"Article 100120\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.jnlest.2021.100120\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Science and Technology\",\"FirstCategoryId\":\"95\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1674862X21000720\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Science and Technology","FirstCategoryId":"95","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1674862X21000720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

通过分析和仿真,研究了材料参数和尺寸参数对氮化铝(AlN)-氮掺杂/纯硅(Si)微机电系统(MEMS)圆盘谐振器的分频、频漂和品质因子(Q)的影响。这些参数包括晶体取向、掺杂物、衬底厚度和温度。谐振器在椭圆、高阶和弯曲模式下工作。仿真结果表明:1)当掺杂浓度为2 × 1019 cm-3、Si厚度为3.5 μm时,n掺杂硅在55°C、-50°C、40°C和-10°C时,谐振腔的翻转点存在,且这些点随衬底厚度和模式的变化而发生位移;ii)与纯Si相比,n掺杂Si的模频分裂更高,所有模式的模频分裂从5%增加到10%;iii)谐振腔的Q值取决于温度和掺杂剂。因此,谐振器的周转率、模频分裂和Q取决于衬底的厚度和材料以及温度。这项工作为高性能MEMS陀螺仪和振荡器的n掺杂温度补偿提供了一个分析和设计平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effects of material and dimension on TCF, frequency, and Q of radial contour mode AlN-on-Si MEMS resonators

This paper investigates the effects of material and dimension parameters on the frequency splitting, frequency drift, and quality factor (Q) of aluminium nitride (AlN)-on-n-doped/pure silicon (Si) microelectromechanical systems (MEMS) disk resonators through analysis and simulation. These parameters include the crystallographic orientation, dopant, substrate thickness, and temperature. The resonators operate in the elliptical, higher order, and flexural modes. The simulation results show that i) the turnover points of the resonators exist at 55 ​°C, –50 ​°C, 40 ​°C, and –10 ​°C for n-doped silicon with the doping concentration of 2 ​× ​1019 ​cm–3 and the Si thickness of 3.5 ​μm, and these points are shifted with the substrate thickness and mode variations; ii) compared with pure Si, the modal-frequency splitting for n-doped Si is higher and increases from 5% to 10% for all studied modes; iii) Q of the resonators depends on the temperature and dopant. Therefore, the turnover, modal-frequency splitting, and Q of the resonators depend on the thickness and material of the substrate and the temperature. This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Electronic Science and Technology
Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
0.00%
发文量
1362
审稿时长
99 days
期刊介绍: JEST (International) covers the state-of-the-art achievements in electronic science and technology, including the most highlight areas: ¨ Communication Technology ¨ Computer Science and Information Technology ¨ Information and Network Security ¨ Bioelectronics and Biomedicine ¨ Neural Networks and Intelligent Systems ¨ Electronic Systems and Array Processing ¨ Optoelectronic and Photonic Technologies ¨ Electronic Materials and Devices ¨ Sensing and Measurement ¨ Signal Processing and Image Processing JEST (International) is dedicated to building an open, high-level academic journal supported by researchers, professionals, and academicians. The Journal has been fully indexed by Ei INSPEC and has published, with great honor, the contributions from more than 20 countries and regions in the world.
期刊最新文献
Source localization based on field signatures: Laboratory ultrasonic validation Machine learning model based on non-convex penalized huberized-SVM Iterative physical optics method based on efficient occlusion judgment with bounding volume hierarchy technology A multi-scale persistent spatiotemporal transformer for long-term urban traffic flow prediction Big data challenge for monitoring quality in higher education institutions using business intelligence dashboards
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1