分子印迹法用于多巴胺电化学测量的柔性膜传感器

Takumi Kishi, T. Fujie, H. Ohta, S. Takeoka
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引用次数: 1

摘要

神经递质负责大脑中神经细胞的信号转导,不仅与我们日常生活中的各种情绪和行为有关,还与大脑疾病有关。因此,测量大脑中的神经递质对脑科学的进步做出了重大贡献。本研究的目的是开发一种柔性薄膜型传感器,该传感器可以选择性地、高灵敏度地电化学测量多巴胺(DA)。薄膜传感器是通过在厚度为25µm的聚酰亚胺薄膜上印刷金胶体油墨来制备的,这是所检查的薄膜中最灵活的,可以保持插入大脑所需的屈曲载荷(1mN)。然后通过使用DA作为模板的聚吡咯(PPy)的电聚合来制备电极(DA-PPy电极)。该传感器的弯曲刚度为4.3×103nNm,是迄今为止报道的所有神经递质传感器中最低的。当使用DA PPy电极使用方波伏安法(SWV)测量DA溶液(0–50 nM)时,校准曲线的斜率比仅使用PPy的阴性对照电极高3.3倍,表明DA分子印迹提高了灵敏度。该传感器用于测量0−50 nM去甲肾上腺素(NE)和血清素(5-HT),并且在0.24V(19±4.4nA/nM)下DA校准曲线的斜率远大于NE(0.99±3.3nA/n)和5-HT(2.5±2.4nA/n M),因为分子印迹也提高了DA的选择性。
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Flexible Film-Type Sensor for Electrochemical Measurement of Dopamine Using a Molecular Imprinting Method
Neurotransmitters, which are responsible for the signal transduction of nerve cells in the brain, are linked not only to various emotions and behaviors in our daily life, but also to brain diseases. Measuring neurotransmitters in the brain therefore makes a significant contribution to the progress of brain science. The purpose of this study is to develop a flexible thin film-type sensor that can electrochemically measure dopamine (DA) selectively and with high sensitivity. The thin-film sensor was prepared by printing gold colloidal ink on a polyimide film with a thickness of 25 µm—which the most flexible of the films examined that could maintain the buckling load (1 mN) required for insertion into the brain. The electrode (DA-PPy electrode) was then prepared by electropolymerization of polypyrrole (PPy) using DA as a template. The flexural rigidity of the sensor was 4.3 × 103 nNm, which is the lowest of any neurotransmitter sensors reported to date. When a DA solution (0–50 nM) was measured with the DA-PPy electrode using square-wave voltammetry (SWV), the slope of the calibration curve was 3.3 times higher than that of the PPy only negative control electrode, indicating an improvement in sensitivity by molecular imprinting with DA. The sensor was used to measure 0−50 nM norepinephrine (NE) and serotonin (5-HT), and the slope of the DA calibration curve at 0.24 V (19 ± 4.4 nA/nM) was much greater than those of NE (0.99 ± 3.3 nA/nM) and 5-HT (2.5 ± 2.4 nA/nM) because the selectivity for DA was also improved by molecular imprinting.
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