Duu Sheng Ong , Siti Amiera Mohd Akhbar , Kan Yeep Choo
{"title":"用于低太赫兹波段应用的陷波-δ掺杂InP Gunn二极管","authors":"Duu Sheng Ong , Siti Amiera Mohd Akhbar , Kan Yeep Choo","doi":"10.1016/j.jnlest.2023.100203","DOIUrl":null,"url":null,"abstract":"<div><p>The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (<em>A</em><sub>0</sub>) and the fundamental operating frequency (<em>f</em><sub>0</sub>) of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in <em>f</em><sub>0</sub> and 2.4 times larger in <em>A</em><sub>0</sub> under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 K to 500 K; however, its operating frequency lies at 280 GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.</p></div>","PeriodicalId":53467,"journal":{"name":"Journal of Electronic Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Notch-δ-doped InP Gunn diodes for low-THz band applications\",\"authors\":\"Duu Sheng Ong , Siti Amiera Mohd Akhbar , Kan Yeep Choo\",\"doi\":\"10.1016/j.jnlest.2023.100203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (<em>A</em><sub>0</sub>) and the fundamental operating frequency (<em>f</em><sub>0</sub>) of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in <em>f</em><sub>0</sub> and 2.4 times larger in <em>A</em><sub>0</sub> under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 K to 500 K; however, its operating frequency lies at 280 GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.</p></div>\",\"PeriodicalId\":53467,\"journal\":{\"name\":\"Journal of Electronic Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Science and Technology\",\"FirstCategoryId\":\"95\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1674862X23000216\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Science and Technology","FirstCategoryId":"95","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1674862X23000216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
Notch-δ-doped InP Gunn diodes for low-THz band applications
The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (A0) and the fundamental operating frequency (f0) of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 K to 500 K; however, its operating frequency lies at 280 GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.
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