用于低太赫兹波段应用的陷波-δ掺杂InP Gunn二极管

Duu Sheng Ong , Siti Amiera Mohd Akhbar , Kan Yeep Choo
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引用次数: 0

摘要

基于陷波δ掺杂结构,利用蒙特卡罗模型分析了磷化铟(InP) Gunn二极管作为低太赫兹波段光源的可行性。在600 nm长度器件中,δ掺杂层的存在使InP - Gunn二极管的电流谐波幅值(A0)和基频(f0)在300 GHz以上得到提高。在直流偏置下,缺口δ掺杂的InP - Gunn二极管具有优异的电子输运性能,比相应的砷化镓(GaAs)二极管高1.35倍,A0高2.4倍。经优化后的InP陷波δ掺杂结构在361 GHz下可产生0.32 w的射频功率。蒙特卡罗模拟预测,当器件温度从300 K增加到500 K时,射频功率降低44%;然而,它的工作频率为280千兆赫,在低太赫兹频段内。这表明,陷波δ掺杂的InP Gunn二极管是一种非常有前途的低太赫兹传感器信号源,这在自动驾驶汽车行业有很高的需求。
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Notch-δ-doped InP Gunn diodes for low-THz band applications

The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (A0) and the fundamental operating frequency (f0) of the InP Gunn diode beyond 300 ​GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 ​GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 ​K to 500 ​K; however, its operating frequency lies at 280 ​GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.

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来源期刊
Journal of Electronic Science and Technology
Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
0.00%
发文量
1362
审稿时长
99 days
期刊介绍: JEST (International) covers the state-of-the-art achievements in electronic science and technology, including the most highlight areas: ¨ Communication Technology ¨ Computer Science and Information Technology ¨ Information and Network Security ¨ Bioelectronics and Biomedicine ¨ Neural Networks and Intelligent Systems ¨ Electronic Systems and Array Processing ¨ Optoelectronic and Photonic Technologies ¨ Electronic Materials and Devices ¨ Sensing and Measurement ¨ Signal Processing and Image Processing JEST (International) is dedicated to building an open, high-level academic journal supported by researchers, professionals, and academicians. The Journal has been fully indexed by Ei INSPEC and has published, with great honor, the contributions from more than 20 countries and regions in the world.
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