单晶EuBiSe3光纤的热电性能

IF 2.7 3区 工程技术 Q2 ENGINEERING, MECHANICAL Nanoscale and Microscale Thermophysical Engineering Pub Date : 2019-01-21 DOI:10.1080/15567265.2019.1566937
Xiuqi Wang, Shaoyi Shi, Xin Qi, Dong Wu, Weigang Ma, Xing Zhang
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引用次数: 1

摘要

摘要通过在Bi2Se3中引入稀土元素Eu,合成了窄带隙半导体EuBiSe3。由于其晶体结构相对复杂,有效质量大,有可能成为一种潜在的热电材料。在本研究中,首次采用t型方法系统表征了直径为167 μm的EuBiSe3纤维在80 ~ 290 K范围内的热电性能,包括导热系数、电导率和塞贝克系数。热导率在三声子Umklapp散射作用下从1.08下降到0.88 W m−1 K−1,随着温度升高到290 K,热导率增加到1.20 W m−1 K−1。在所研究的温度范围内,电导率为4209 ~ 5240 S m−1。随着温度的升高,绝对塞贝克系数略有增加,达到204µVK−1。所得无因次值ZT在290 K时的最大值为0.05。
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Thermoelectric Properties of Single Crystal EuBiSe3 Fiber
ABSTRACT EuBiSe3, a narrow-band-gap semiconductor, is synthesized by introducing the rare earth element Eu into Bi2Se3. It can be a potential thermoelectric material due to the relatively complex crystal structure and large effective mass. In this study, the thermoelectric properties of a EuBiSe3 fiber with a diameter of 167 μm have been characterized systematically for the first time from 80 to 290 K by applying our developed T-type method, including thermal conductivity, electrical conductivity and Seebeck coefficient. The thermal conductivity decreases from 1.08 to 0.88 W m−1 K−1 dominated by three-phonon Umklapp scattering and then increases to 1.20 W m−1 K−1 as the temperature increases to 290 K. The electrical conductivity varies from 4209 to 5240 S m−1 in the studied temperature range. The absolute Seebeck coefficient increases slightly to 204 µVK−1 with the increase of temperature. The highest value of the determined dimensionless figure of merit ZT is 0.05, obtained at 290 K.
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来源期刊
Nanoscale and Microscale Thermophysical Engineering
Nanoscale and Microscale Thermophysical Engineering 工程技术-材料科学:表征与测试
CiteScore
5.90
自引率
2.40%
发文量
12
审稿时长
3.3 months
期刊介绍: Nanoscale and Microscale Thermophysical Engineering is a journal covering the basic science and engineering of nanoscale and microscale energy and mass transport, conversion, and storage processes. In addition, the journal addresses the uses of these principles for device and system applications in the fields of energy, environment, information, medicine, and transportation. The journal publishes both original research articles and reviews of historical accounts, latest progresses, and future directions in this rapidly advancing field. Papers deal with such topics as: transport and interactions of electrons, phonons, photons, and spins in solids, interfacial energy transport and phase change processes, microscale and nanoscale fluid and mass transport and chemical reaction, molecular-level energy transport, storage, conversion, reaction, and phase transition, near field thermal radiation and plasmonic effects, ultrafast and high spatial resolution measurements, multi length and time scale modeling and computations, processing of nanostructured materials, including composites, micro and nanoscale manufacturing, energy conversion and storage devices and systems, thermal management devices and systems, microfluidic and nanofluidic devices and systems, molecular analysis devices and systems.
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