基于Algan/GaN异质结的日盲紫外探测

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-05-01 DOI:10.1166/jno.2023.3426

Lechen Yang, Kai Fu, Min Xiong, Haijun Li, Wenhua Shi, Baoshun Zhang

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引用次数: 0

摘要

制作并测试了一种基于双色AlGaN/GaN异质结构的太阳盲紫外金属-半导体-金属光电探测器。该器件采用单一的AlGaN/GaN层，在太阳盲紫外线下具有良好的光响应。通过改变入射光信号的频率和偏置电压，研究了光电探测器的光谱响应。在5v偏置下，260 nm处峰值响应为0.288 A/W, 366 nm处峰值响应为0.322 A/W。

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Solar-Blind Ultraviolet Detection Based on Algan/GaN Heterojunction

A solar-blind ultraviolet metal-semiconductor-metal photodetector based on dual-color AlGaN/GaN heterostructure was fabricated and tested. The device showed good photo-response in solar-blind ultraviolet, by employing a single AlGaN/GaN layer. Spectrum responses of the photodetector were investigated by changing the frequency of incident light signals and the bias voltages. The peak response was 0.288 A/W at 260 nm and 0.322 A/W at 366 nm at the bias of 5 V.

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来源期刊

Journal of Nanoelectronics and Optoelectronics 工程技术-工程：电子与电气

自引率

16.70%

发文量

审稿时长

12.5 months