通过最小的几何修改来减少涂有两层薄层的硅片的翘曲

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2023-04-26 DOI:10.1108/mi-02-2022-0025
Imad El Fatmi, S. Belhenini, A. Tougui
{"title":"通过最小的几何修改来减少涂有两层薄层的硅片的翘曲","authors":"Imad El Fatmi, S. Belhenini, A. Tougui","doi":"10.1108/mi-02-2022-0025","DOIUrl":null,"url":null,"abstract":"\nPurpose\nThe aim of this study is to make a contribution towards reducing the deflections of silicon wafers. The deformation of silicon wafers used in the manufacture of electronic micro-components is one of the most common problems encountered by industrialists during manufacturing. Stack warping is typically produced during the process of depositing thin layers on a substrate. This is due to the thermal-mechanical stresses caused by the difference between the thermal expansion coefficients of the materials. Reducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models. The results obtained are encouraging and clearly show a considerable reduction in wafer deformation.\n\n\nDesign/methodology/approach\nReducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models.\n\n\nFindings\nThe results obtained are encouraging and clearly show a considerable reduction in wafer deformation.\n\n\nOriginality/value\nThis paper describes the influence of geometric modification on wafer deformation. The work show also the cruciality of stress reduction in the purpose to obtain less wafer deformation.\n","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2023-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reduction of the warping of a silicon wafer coated with two thin layers by minimal geometric modifications\",\"authors\":\"Imad El Fatmi, S. Belhenini, A. Tougui\",\"doi\":\"10.1108/mi-02-2022-0025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\nPurpose\\nThe aim of this study is to make a contribution towards reducing the deflections of silicon wafers. The deformation of silicon wafers used in the manufacture of electronic micro-components is one of the most common problems encountered by industrialists during manufacturing. Stack warping is typically produced during the process of depositing thin layers on a substrate. This is due to the thermal-mechanical stresses caused by the difference between the thermal expansion coefficients of the materials. Reducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models. The results obtained are encouraging and clearly show a considerable reduction in wafer deformation.\\n\\n\\nDesign/methodology/approach\\nReducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models.\\n\\n\\nFindings\\nThe results obtained are encouraging and clearly show a considerable reduction in wafer deformation.\\n\\n\\nOriginality/value\\nThis paper describes the influence of geometric modification on wafer deformation. The work show also the cruciality of stress reduction in the purpose to obtain less wafer deformation.\\n\",\"PeriodicalId\":49817,\"journal\":{\"name\":\"Microelectronics International\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2023-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics International\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1108/mi-02-2022-0025\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics International","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/mi-02-2022-0025","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

目的为减少硅片的偏转做出贡献。电子微元件制造中硅片的变形是工业家在制造过程中遇到的最常见问题之一。叠层翘曲通常是在衬底上沉积薄层的过程中产生的。这是由于材料的热膨胀系数之间的差异引起的热机械应力。减少晶圆片变形对提高可靠性和提高质量至关重要。在本文中,作者提出了一种基于最小几何修改的方法来减少涂有两层薄层的硅片的变形。已经建立了数值有限元模型来评估几何修正对翘曲幅度的影响。将有限元模型与实验模型进行了对比验证。得到的结果是令人鼓舞的,并且清楚地表明晶圆变形有相当大的减少。设计/方法/途径减少晶圆片变形对提高可靠性和提高质量至关重要。在本文中,作者提出了一种基于最小几何修改的方法来减少涂有两层薄层的硅片的变形。已经建立了数值有限元模型来评估几何修正对翘曲幅度的影响。将有限元模型与实验模型进行了对比验证。研究结果令人鼓舞,并清楚地表明晶圆变形有相当大的减少。原创性/价值本文描述了几何修饰对晶圆变形的影响。研究还表明,为了减小晶片变形,减小应力是至关重要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Reduction of the warping of a silicon wafer coated with two thin layers by minimal geometric modifications
Purpose The aim of this study is to make a contribution towards reducing the deflections of silicon wafers. The deformation of silicon wafers used in the manufacture of electronic micro-components is one of the most common problems encountered by industrialists during manufacturing. Stack warping is typically produced during the process of depositing thin layers on a substrate. This is due to the thermal-mechanical stresses caused by the difference between the thermal expansion coefficients of the materials. Reducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models. The results obtained are encouraging and clearly show a considerable reduction in wafer deformation. Design/methodology/approach Reducing wafer deformation is essential to increase reliability and improve quality. In this paper, the authors propose an approach based on minimal geometrical modifications to reduce the deformation of a silicon wafer coated with two thin layers. Numerical finite element models have been developed to evaluate the impact of geometrical modifications on warping amplitude. Finite element models have been validated compared with experimental models. Findings The results obtained are encouraging and clearly show a considerable reduction in wafer deformation. Originality/value This paper describes the influence of geometric modification on wafer deformation. The work show also the cruciality of stress reduction in the purpose to obtain less wafer deformation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
期刊最新文献
Study of the electronic transport performance of ZnO-SiO2 film: the construction of grain boundary barrier 3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation Simplifying finite elements analysis of four-point bending tests for flip chip microcomponents Quasi-elliptic band pass filter using resonators based on coupling theory for ultra-wide band applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1