F. Rafique, M. Ishfaq, S. Aldaghfag, M. Yaseen, M. Zahid, M. Butt
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Further analysis of projected DOS reveals the Ni-d based metallic character in spin down channel along with semiconductive nature in spin up version, translating the considered doped systems into half metallic ferromagnetic (HMFM) materials. The computed HM direct gaps are 0.956, 0.957, 1.040 and 0.876 eV for K 0.875 Ni 0.125 NbO 3 , K 0.75 Ni 0.25 NbO 3 , K 0.5 Ni 0.5 NbO 3 , and K 0.25 Ni 0.75 NbO 3 , respectively. The magnetic moment values obtained for K 0.875 Ni 0.125 NbO 3 , K 0.75 Ni 0.25 NbO 3 , K 0.5 Ni 0.5 NbO 3 , and K 0.25 Ni 0.75 NbO 3 , are 1.00153, 1.00003, 1.02449, and 1.04210 μ B per formula unit, respectively. The determined magnetic moment values illustrate the ferromagnetism in studied Ni modified KNbO 3 , perovskites, which is originated from Ni and minor contribution of O ions. Further, optical response of Ni doped KNbO 3 is studied which show UV region of light as a strong absorbing region. The presented results predict the suitability of considered material in various optical filters and spintronic devices.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First principles insight into magnetic and optoelectronic properties of Ni doped KNbO3 perovskite\",\"authors\":\"F. Rafique, M. Ishfaq, S. Aldaghfag, M. Yaseen, M. Zahid, M. Butt\",\"doi\":\"10.15251/jor.2023.194.453\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The future technologies belong to the spin-based electronics (called spintronics) which is considered as highly efficient and quick response device with advanced functionalities. 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引用次数: 0
摘要
未来的技术属于基于自旋的电子技术(称为自旋电子学),它被认为是一种具有先进功能的高效快速响应设备。为了开发一种功能性的自旋电子器件,控制自旋电流及其磁状态的读出是有意义的,这说明了本研究的重要性。本文通过掺杂浓度为12.5%、25%、50%和75%的浓度依赖性Ni掺杂来设计KNbO3的物理性质。获得了铁磁特性以及自旋极化带和DOS结构。对投影DOS的进一步分析揭示了自旋下降通道中的Ni-d基金属特性以及自旋上升版本中的半导电性质,将所考虑的掺杂系统转化为半金属铁磁(HMFM)材料。对于K 0.875 Ni 0.125 NbO3、K 0.75 Ni 0.25 NbO3、K0.5 Ni 0.5 NbO3和K 0.25 Ni 0.75 NbO3,计算的HM直接间隙分别为0.956、0.957、1.040和0.876eV。K 0.875 Ni 0.125 NbO3、K 0.75 Ni 0.25 NbO3、K 0.5 Ni 0.5 NbO3和K 0.25 Ni 0.75 NbO3的磁矩值分别为1.00153、1.00003、1.02449和1.04210μB/公式单位。所测定的磁矩值说明了所研究的镍改性KNbO3钙钛矿中的铁磁性,其来源于Ni和O离子的少量贡献。此外,还研究了Ni掺杂KNbO3的光学响应,表明光的紫外区域是一个强吸收区域。所给出的结果预测了所考虑的材料在各种光学滤波器和自旋电子器件中的适用性。
First principles insight into magnetic and optoelectronic properties of Ni doped KNbO3 perovskite
The future technologies belong to the spin-based electronics (called spintronics) which is considered as highly efficient and quick response device with advanced functionalities. In order to develop a functional spintronic device, it is pertinent to control the spin currents and readout of their magnetic states which exemplify the importance of presented study. Herein, physical properties of KNbO 3 are engineered via concentration dependent Ni doping with dopant’s concentration of 12.5%, 25%, 50%, and 75%. Ferromagnetic character is obtained along with spin polarized bands and DOS structures. Further analysis of projected DOS reveals the Ni-d based metallic character in spin down channel along with semiconductive nature in spin up version, translating the considered doped systems into half metallic ferromagnetic (HMFM) materials. The computed HM direct gaps are 0.956, 0.957, 1.040 and 0.876 eV for K 0.875 Ni 0.125 NbO 3 , K 0.75 Ni 0.25 NbO 3 , K 0.5 Ni 0.5 NbO 3 , and K 0.25 Ni 0.75 NbO 3 , respectively. The magnetic moment values obtained for K 0.875 Ni 0.125 NbO 3 , K 0.75 Ni 0.25 NbO 3 , K 0.5 Ni 0.5 NbO 3 , and K 0.25 Ni 0.75 NbO 3 , are 1.00153, 1.00003, 1.02449, and 1.04210 μ B per formula unit, respectively. The determined magnetic moment values illustrate the ferromagnetism in studied Ni modified KNbO 3 , perovskites, which is originated from Ni and minor contribution of O ions. Further, optical response of Ni doped KNbO 3 is studied which show UV region of light as a strong absorbing region. The presented results predict the suitability of considered material in various optical filters and spintronic devices.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.