ti位络合物取代改善MgTiO3陶瓷的微波介电性能

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2023-09-05 DOI:10.1007/s13391-023-00456-x
Jong Seok Chung, Eung Soo Kim
{"title":"ti位络合物取代改善MgTiO3陶瓷的微波介电性能","authors":"Jong Seok Chung,&nbsp;Eung Soo Kim","doi":"10.1007/s13391-023-00456-x","DOIUrl":null,"url":null,"abstract":"<div><p>Microwave dielectric properties of MgTi<sub>1-<i>x</i></sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub><i>x</i></sub>O<sub>3</sub> (0 ≤ <i>x</i> ≤ 0.05) ceramics were investigated based on their crystal structure characteristics. For the specimens sintered at 1400 °C for 4 h, complete solid solutions with a single phase and an ilmenite structure were obtained for the entire range of compositions. The quality factor (<i>Qf</i>) was dependent on the average Ti-site covalency related to the electronegativity difference and the reduction state of Ti<sup>4+</sup>. MgTi<sub>0.995</sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.005</sub>O<sub>3</sub> exhibited the highest <i>Qf</i> value of 212,000 GHz owing to the high average covalency obtained from the Rietveld refinement of X-ray Diffraction patterns, high binding energy, and small full width at half maximum of Ti 2<i>p</i> peaks, as confirmed by X-ray Photoelectron Spectroscopy of MgTiO<sub>3</sub> –based ceramics. The temperature coefficients of the resonant frequency (<i>TCF</i>) of MgTiO<sub>3</sub>-based ceramics were dependent on the degree of average oxygen octahedral distortion of the ilmenite structure. The dielectric constant (<i>K</i>) was affected by the theoretical dielectric polarizability of the constituent ions of sintered specimens. Excellent microwave dielectric properties were obtained for MgTi<sub>0.995</sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.005</sub>O<sub>3</sub>; <i>K</i> = 18.05, <i>Qf</i> = 212,000 GHz, TCF =  − 37.04 ppm/°C. The microwave dielectric properties were improved by substituting (Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sup>4+</sup> for Ti<sup>4+</sup> in MgTiO<sub>3</sub>-based ceramics.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"56 - 64"},"PeriodicalIF":2.1000,"publicationDate":"2023-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of Microwave Dielectric Properties of MgTiO3 Ceramics by Ti-Site Complex Substitution\",\"authors\":\"Jong Seok Chung,&nbsp;Eung Soo Kim\",\"doi\":\"10.1007/s13391-023-00456-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Microwave dielectric properties of MgTi<sub>1-<i>x</i></sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub><i>x</i></sub>O<sub>3</sub> (0 ≤ <i>x</i> ≤ 0.05) ceramics were investigated based on their crystal structure characteristics. For the specimens sintered at 1400 °C for 4 h, complete solid solutions with a single phase and an ilmenite structure were obtained for the entire range of compositions. The quality factor (<i>Qf</i>) was dependent on the average Ti-site covalency related to the electronegativity difference and the reduction state of Ti<sup>4+</sup>. MgTi<sub>0.995</sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.005</sub>O<sub>3</sub> exhibited the highest <i>Qf</i> value of 212,000 GHz owing to the high average covalency obtained from the Rietveld refinement of X-ray Diffraction patterns, high binding energy, and small full width at half maximum of Ti 2<i>p</i> peaks, as confirmed by X-ray Photoelectron Spectroscopy of MgTiO<sub>3</sub> –based ceramics. The temperature coefficients of the resonant frequency (<i>TCF</i>) of MgTiO<sub>3</sub>-based ceramics were dependent on the degree of average oxygen octahedral distortion of the ilmenite structure. The dielectric constant (<i>K</i>) was affected by the theoretical dielectric polarizability of the constituent ions of sintered specimens. Excellent microwave dielectric properties were obtained for MgTi<sub>0.995</sub>(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.005</sub>O<sub>3</sub>; <i>K</i> = 18.05, <i>Qf</i> = 212,000 GHz, TCF =  − 37.04 ppm/°C. The microwave dielectric properties were improved by substituting (Mn<sub>1/3</sub>Nb<sub>2/3</sub>)<sup>4+</sup> for Ti<sup>4+</sup> in MgTiO<sub>3</sub>-based ceramics.</p><h3>Graphical Abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 1\",\"pages\":\"56 - 64\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00456-x\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00456-x","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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摘要

根据 MgTi1-x(Mn1/3Nb2/3)xO3(0 ≤ x ≤ 0.05)陶瓷的晶体结构特征,研究了其微波介电性能。对于在 1400 °C 下烧结 4 小时的试样,在整个成分范围内都获得了具有单相和钛铁矿结构的完整固溶体。品质因数(Qf)取决于与电负性差异和 Ti4+ 的还原状态有关的平均 Ti 位共价。MgTi0.995(Mn1/3Nb2/3)0.005O3 的 Qf 值最高,达到 212,000 GHz,这是因为根据 X 射线衍射图样的里特维尔德细化得到的平均共价率高、结合能高、Ti 2p 峰的半最大全宽小,这一点已通过 MgTiO3 基陶瓷的 X 射线光电子能谱分析得到证实。MgTiO3 基陶瓷的共振频率温度系数(TCF)取决于钛铁矿结构的八面体平均氧畸变程度。介电常数(K)受烧结试样中组成离子的理论介电极化率的影响。MgTi0.995(Mn1/3Nb2/3)0.005O3 获得了优异的微波介电性能;K = 18.05,Qf = 212,000 GHz,TCF = - 37.04 ppm/°C。通过在 MgTiO3 基陶瓷中用 (Mn1/3Nb2/3)4+ 代替 Ti4+,微波介电性能得到了改善。 图文摘要
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Improvement of Microwave Dielectric Properties of MgTiO3 Ceramics by Ti-Site Complex Substitution

Microwave dielectric properties of MgTi1-x(Mn1/3Nb2/3)xO3 (0 ≤ x ≤ 0.05) ceramics were investigated based on their crystal structure characteristics. For the specimens sintered at 1400 °C for 4 h, complete solid solutions with a single phase and an ilmenite structure were obtained for the entire range of compositions. The quality factor (Qf) was dependent on the average Ti-site covalency related to the electronegativity difference and the reduction state of Ti4+. MgTi0.995(Mn1/3Nb2/3)0.005O3 exhibited the highest Qf value of 212,000 GHz owing to the high average covalency obtained from the Rietveld refinement of X-ray Diffraction patterns, high binding energy, and small full width at half maximum of Ti 2p peaks, as confirmed by X-ray Photoelectron Spectroscopy of MgTiO3 –based ceramics. The temperature coefficients of the resonant frequency (TCF) of MgTiO3-based ceramics were dependent on the degree of average oxygen octahedral distortion of the ilmenite structure. The dielectric constant (K) was affected by the theoretical dielectric polarizability of the constituent ions of sintered specimens. Excellent microwave dielectric properties were obtained for MgTi0.995(Mn1/3Nb2/3)0.005O3; K = 18.05, Qf = 212,000 GHz, TCF =  − 37.04 ppm/°C. The microwave dielectric properties were improved by substituting (Mn1/3Nb2/3)4+ for Ti4+ in MgTiO3-based ceramics.

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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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