Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device

The reliability of 4H-SiC bipolar devices is compromised by the expansion of single Shockley stacking faults (SSFs) during forward-current operation. Because SSF expansion is governed by multiphysical aspects, including electrical, thermal, and stress states, analysis of the mounted structure is important for improving power module design. We propose a practical design method that analyzes the critical condition due to SSF expansion using a combined method with a multiphysical finite element method (FEM) and phase field model based on the time-dependent Ginzburg–Landau equation. In preliminary studies, the thermal deformation of the demonstration module and the variation of threshold current of a bar-shaped SSF were verified from experimental and reference data. Estimating the SSF expansion rate on the constructed response surface under the mutiphysical inputs from FEM, the proposed design method can be used effectively in the design process by changing the various design variables.