同步辐射X射线形貌分析p+离子注入引起的基面位错运动

Q4 Physics and Astronomy Defect and Diffusion Forum Pub Date : 2023-06-06 DOI:10.4028/p-4mo61y
Zeyu Chen, Ya Fei Liu, Hongyu Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley, Stephen A. Mancini, S. Jang, Woongje Sung
{"title":"同步辐射X射线形貌分析p+离子注入引起的基面位错运动","authors":"Zeyu Chen, Ya Fei Liu, Hongyu Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley, Stephen A. Mancini, S. Jang, Woongje Sung","doi":"10.4028/p-4mo61y","DOIUrl":null,"url":null,"abstract":"Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subsequent annealing process was conducted at 1650 °C for 10 minutes to activate the dopant atoms and recover the lattice damages introduced by the implantation. Synchrotron X-ray topography was used to characterize the defects in the devices, and it is observed that basal plane dislocations (BPDs) were generated during the annealing process from the boundaries between the high (P+) and low (P-) doping concentration in devices implanted with relatively high doses at RT. Further, topographs also manifest motion of BPDs due to implantation-induced stresses, where BPDs with opposite sign Burgers vectors move in directions accommodative of nature of stress (tensile/compressive). On the other hand, generation of BPDs due to implantation was not observed in devices implanted either at relatively low dosages at both temperatures or relatively high dosages at high temperature. Measurements of blocking behaviors of devices illustrate that devices with higher densities of process-induced BPDs yield higher leakage currents.","PeriodicalId":11306,"journal":{"name":"Defect and Diffusion Forum","volume":"426 1","pages":"71 - 78"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography\",\"authors\":\"Zeyu Chen, Ya Fei Liu, Hongyu Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley, Stephen A. Mancini, S. Jang, Woongje Sung\",\"doi\":\"10.4028/p-4mo61y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subsequent annealing process was conducted at 1650 °C for 10 minutes to activate the dopant atoms and recover the lattice damages introduced by the implantation. Synchrotron X-ray topography was used to characterize the defects in the devices, and it is observed that basal plane dislocations (BPDs) were generated during the annealing process from the boundaries between the high (P+) and low (P-) doping concentration in devices implanted with relatively high doses at RT. Further, topographs also manifest motion of BPDs due to implantation-induced stresses, where BPDs with opposite sign Burgers vectors move in directions accommodative of nature of stress (tensile/compressive). On the other hand, generation of BPDs due to implantation was not observed in devices implanted either at relatively low dosages at both temperatures or relatively high dosages at high temperature. Measurements of blocking behaviors of devices illustrate that devices with higher densities of process-induced BPDs yield higher leakage currents.\",\"PeriodicalId\":11306,\"journal\":{\"name\":\"Defect and Diffusion Forum\",\"volume\":\"426 1\",\"pages\":\"71 - 78\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Defect and Diffusion Forum\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4028/p-4mo61y\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Physics and Astronomy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Defect and Diffusion Forum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-4mo61y","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0

摘要

在室温(RT)和高温(600°C)下,通过不同剂量的Al离子注入,在具有10μm厚外延层的4H-SiC晶片上制备了多个具有结端扩展(JTE)的PIN二极管。随后的退火过程在1650°C下进行10分钟,以激活掺杂剂原子并恢复由注入引入的晶格损伤。使用同步加速器X射线形貌来表征器件中的缺陷,并观察到在退火过程中,在RT下以相对高剂量注入的器件中,从高(P+)和低(P-)掺杂浓度之间的边界产生了基面位错(BPD)。此外,拓扑图还显示了由于注入诱导的应力而引起的BPD的运动,其中具有相反符号Burgers矢量的BPD在适应应力性质(拉伸/压缩)的方向上移动。另一方面,在两种温度下以相对低的剂量或在高温下以相对高的剂量植入的器件中,都没有观察到由于植入而产生的BPD。器件阻塞行为的测量表明,具有更高密度的工艺诱导BPD的器件产生更高的漏电流。
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Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subsequent annealing process was conducted at 1650 °C for 10 minutes to activate the dopant atoms and recover the lattice damages introduced by the implantation. Synchrotron X-ray topography was used to characterize the defects in the devices, and it is observed that basal plane dislocations (BPDs) were generated during the annealing process from the boundaries between the high (P+) and low (P-) doping concentration in devices implanted with relatively high doses at RT. Further, topographs also manifest motion of BPDs due to implantation-induced stresses, where BPDs with opposite sign Burgers vectors move in directions accommodative of nature of stress (tensile/compressive). On the other hand, generation of BPDs due to implantation was not observed in devices implanted either at relatively low dosages at both temperatures or relatively high dosages at high temperature. Measurements of blocking behaviors of devices illustrate that devices with higher densities of process-induced BPDs yield higher leakage currents.
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来源期刊
Defect and Diffusion Forum
Defect and Diffusion Forum Physics and Astronomy-Radiation
CiteScore
1.20
自引率
0.00%
发文量
127
期刊介绍: Defect and Diffusion Forum (formerly Part A of ''''Diffusion and Defect Data'''') is designed for publication of up-to-date scientific research and applied aspects in the area of formation and dissemination of defects in solid materials, including the phenomena of diffusion. In addition to the traditional topic of mass diffusion, the journal is open to papers from the area of heat transfer in solids, liquids and gases, materials and substances. All papers are peer-reviewed and edited. Members of Editorial Boards and Associate Editors are invited to submit papers for publication in “Defect and Diffusion Forum” . Authors retain the right to publish an extended and significantly updated version in another periodical.
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