基于不同结构的生物晶体管传感器内部电噪声

L. Gasparyan, F. Gasparyan, V. Simonyan
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引用次数: 1

摘要

介绍了基于不同结构MIS(金属绝缘体半导体)、EIS(电解质绝缘体半导体)和ISFET(离子选择场效应晶体管)的纳米级生物场效应晶体管和DNA(脱氧核糖核酸)传感器的内部电噪声和信噪比的对比文献分析结果。分析、总结和介绍了基于生化场效应的传感器内部噪声的主要类型、模型和机理。首次建立了相应的详细等效电路,以计算基于MIS、EIS和ISFET结构的传感器在固体(半导体、电介质)的活性部分和水溶液中产生的噪声的频谱密度。获得了噪声电流(或电压)的均方根值以及所研究架构的噪声频谱密度的完整表达式。生物传感器的小型化导致有用信号电流水平的降低。为了传感器的成功操作,有必要确保SNR(信噪比)的高值。在有用信号较弱的情况下,有必要降低内部电噪声的水平。这项工作致力于详细研究特定生物传感器结构中内部电噪声的类型和机制。
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Internal Electrical Noises of BioFET Sensors Based on Various Architectures
The results of a comparative literature analysis of internal electrical noises and signal-to-noise ratio for nanoscale BioFET (biological field-effect transistor) and DNA (deoxyribonucleic acid) sensors based on different architectures MIS (metal-insulator-semiconductor), EIS (electrolyte-insulator-semi-conductor) and ISFET (ion-selective field-effect transistor) are presented. Main types, models and mechanisms of internal noises of bio- & chemical field-effect based sensors are analyzed, summarized and presented. For the first time, corresponding detail electrical equivalent circuits were built to calculate the spectral densities of noises generated in the active part of a solid (semiconductor, dielectric) and in an aqueous solution for MIS, EIS and ISFET structures based sensors. Complete expressions are obtained for the rms (root mean square) value of the noise current (or voltage), as well as the noise spectral densities for the architectures under study. The miniaturization of biosensors leads to a decrease in the level of the useful signal-current. For successful operation of the sensor, it is necessary to ensure a high value of the SNR (signal-to-noise ratio). In case of weak useful signals, it is necessary to reduce the level of internal electrical noise. This work is devoted to a detailed study of the types and mechanisms of internal electrical noises in specific biosensor architectures.
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来源期刊
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