A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard
{"title":"用Cr Kα光子研究硅上GaN薄膜的HAXPES","authors":"A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard","doi":"10.1116/6.0000888","DOIUrl":null,"url":null,"abstract":"Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":"28 1","pages":"014006"},"PeriodicalIF":1.6000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"HAXPES of GaN film on Si with Cr Kα photons\",\"authors\":\"A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard\",\"doi\":\"10.1116/6.0000888\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.\",\"PeriodicalId\":22006,\"journal\":{\"name\":\"Surface Science Spectra\",\"volume\":\"28 1\",\"pages\":\"014006\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2021-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Science Spectra\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0000888\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Spectra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0000888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.
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