一种1.8V高速8位混合DAC,带有CMOS 180nm的集成轨对轨缓冲放大器

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2021-05-18 DOI:10.1108/MI-10-2020-0073
N. Idros, A. Rosli, Z. Aziz, J. Rajendran, A. Marzuki
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引用次数: 0

摘要

本文的目的是介绍一种适用于无线应用或ADC内置测试块的8位混合DAC的性能。使用的混合架构是温度计编码和二元加权电阻架构的组合。设计/方法/方法在高分辨率应用中,传统的DAC拓扑性能往往会下降。在这项工作中,提出了一种混合拓扑,它结合了等量的温度计编码和在更高采样频率下工作的二进制加权电阻架构。该芯片采用180nm CMOS工艺,电源电压为1.8 V。测量结果表明,在时钟频率为200mhz时,输入范围为0.9 V时,DNL和INL误差分别在−1 ~ +1 LSB和−0.9 ~ +0.9 LSB之间,且该DAC是单调的。这个0.068 mm2的DAC用于数据转换消耗12.6 mW。这篇论文的价值在于展示了温度计编码和二进制加权电阻架构的等分位,提供了更小的芯片尺寸,并提高了混合DAC的性能,就线性度而言,这是DNL和INL误差,并保证了在更高采样频率下的单调性。
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A 1.8 V high-speed 8-bit hybrid DAC with integrated rail-to-rail buffer amplifier in CMOS 180 nm
Purpose The purpose of this paper is to present the performance of an 8-bit hybrid DAC which is suitable for wireless application or part of a built-in test block for ADC. The hybrid architecture used is the combination of thermometer coding and binary-weighted resistor architectures. Design/methodology/approach The conventional DAC topology performance tends to degrade at high-resolution applications. A hybrid topology, which combines an equal number of bits of thermometer coding and binary-weighted resistor architectures operating at higher sampling frequency, was proposed in this work. The die was fabricated in 180 nm CMOS process technology with a supplied voltage of 1.8 V. Findings Measured results showed that the DNL and INL errors are within −1 to +1 LSB and −0.9 to +0.9 LSB, respectively for the input range of 0.9 V at the clock rate of 200 MHz, and this DAC was proven monotonic. This 0.068 mm2 DAC consumed 12.6 mW for the data conversion. Originality/value This paper is of value in showing the equal division of bits from thermometer coding and binary-weighted resistor architectures provides smaller die size and enhances the performance of hybrid DAC, in terms of linearity, which are DNL and INL errors and guarantees monotonicity at higher sampling frequency.
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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