{"title":"ε-GaFeO3衬底晶格匹配掺铟κ-Ga2O3薄膜的生长","authors":"Hiroyuki Nishinaka , Osamu Ueda , Noriaki Ikenaga , Noriyuki Hasuike , Masahiro Yoshimoto","doi":"10.1016/j.mlblux.2022.100149","DOIUrl":null,"url":null,"abstract":"<div><p>Ga<sub>2</sub>O<sub>3</sub> has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film grown on an ε-GaFeO<sub>3</sub> substrate via the mist chemical vapor deposition process. The X-ray diffraction peak of the thin film was almost coincident with that of the substrate and exhibited Laue oscillations. Atomic force microscopy revealed that the surface of the κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film exhibited a step-terrace morphology and was atomically flat. The selected area electron diffraction of transmission electron microscopy showed that the diffraction spots of the thin film and substrate overlapped, indicating that the thin film was almost lattice-matched with the substrate. We believe that the lattice-matched κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film with an ε-GaFeO<sub>3</sub> substrate will contribute significantly to the demonstration of ferroelectric κ-Ga<sub>2</sub>O<sub>3</sub> based high electron mobility transistors.</p></div>","PeriodicalId":18245,"journal":{"name":"Materials Letters: X","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590150822000291/pdfft?md5=1554edeaa9c6a978bafb7723ca6c00e1&pid=1-s2.0-S2590150822000291-main.pdf","citationCount":"1","resultStr":"{\"title\":\"Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate\",\"authors\":\"Hiroyuki Nishinaka , Osamu Ueda , Noriaki Ikenaga , Noriyuki Hasuike , Masahiro Yoshimoto\",\"doi\":\"10.1016/j.mlblux.2022.100149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ga<sub>2</sub>O<sub>3</sub> has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film grown on an ε-GaFeO<sub>3</sub> substrate via the mist chemical vapor deposition process. The X-ray diffraction peak of the thin film was almost coincident with that of the substrate and exhibited Laue oscillations. Atomic force microscopy revealed that the surface of the κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film exhibited a step-terrace morphology and was atomically flat. The selected area electron diffraction of transmission electron microscopy showed that the diffraction spots of the thin film and substrate overlapped, indicating that the thin film was almost lattice-matched with the substrate. We believe that the lattice-matched κ-(In<sub>1−</sub><em><sub>x</sub></em>Ga<em><sub>x</sub></em>)<sub>2</sub>O<sub>3</sub> thin film with an ε-GaFeO<sub>3</sub> substrate will contribute significantly to the demonstration of ferroelectric κ-Ga<sub>2</sub>O<sub>3</sub> based high electron mobility transistors.</p></div>\",\"PeriodicalId\":18245,\"journal\":{\"name\":\"Materials Letters: X\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2590150822000291/pdfft?md5=1554edeaa9c6a978bafb7723ca6c00e1&pid=1-s2.0-S2590150822000291-main.pdf\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Letters: X\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590150822000291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590150822000291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate
Ga2O3 has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In1−xGax)2O3 thin film grown on an ε-GaFeO3 substrate via the mist chemical vapor deposition process. The X-ray diffraction peak of the thin film was almost coincident with that of the substrate and exhibited Laue oscillations. Atomic force microscopy revealed that the surface of the κ-(In1−xGax)2O3 thin film exhibited a step-terrace morphology and was atomically flat. The selected area electron diffraction of transmission electron microscopy showed that the diffraction spots of the thin film and substrate overlapped, indicating that the thin film was almost lattice-matched with the substrate. We believe that the lattice-matched κ-(In1−xGax)2O3 thin film with an ε-GaFeO3 substrate will contribute significantly to the demonstration of ferroelectric κ-Ga2O3 based high electron mobility transistors.
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