Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters

This research aims to study the impact of some physical and structural parameters on the I–V characteristics of a high electron mobility transistors (HEMTs) based on AlxGa1-x N/GaN, we investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8 N/GaN heterostructures with 400 nm of buffer layer and a layer doped with  n = 4 x 1018 cm-3 , for this structure we find the maximum saturation current of 420 mA/mm . The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.