E. Simoen, Carlos H. S. Coelho, Vanessa C.P. da Silva, J. Martino, P. Agopian, A. Oliveira, B. Crețu, A. Veloso
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In this review paper, the performance characteristics of Gate-All-Around (GAA) double nanosheet (NS) MOSFETs are described over a broad temperature range, from 78 K to 473 K (200 oC). Emphasis is on the analog operation, showing good potential. Besides the transistor length, the impact of the metal gate Effective Work Function and the vertical distance between the nanosheets has been studied. Among others, a clear Zero Temperature Coefficient (ZTC) gate voltage has been observed that can be modeled by considering the shift with temperature of the threshold voltage and the maximum transconductance. A trade-off has been noticed between the transistor efficiency and the unit gain frequency, whereby the optimal operation point occurs in strong inversion regime. The feasibility of designing simple analog circuits has also been demonstrated. Finally, a detailed investigation of the low-frequency noise behavior yields good values for the flicker noise Power Spectral Density in comparison with other technology nodes.
期刊介绍：
This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
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