无铅和Ge基立方钙钛矿RbGeX - 3 (X= I, Br和Cl)结构、电子和光学性质的DFT研究

N. Abdulkareem
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引用次数: 0

摘要

目前的研究使用密度泛函理论(DFT)近似结合平面波伪势方法来研究无铅立方钙钛矿RbGeX 3 (X= I, Br和Cl)材料的结构,电子和光学性质。更具体地说,采用范数守恒赝势来描述离子和价电子的相互作用,并使用GGA- pbe风味来表示GGA近似能量的交换相关部分。得到的RbGeX 3(其中X=I, Br和Cl)的晶格参数分别为5.95,5.55和5.29 Å,它们与现有的经验值和其他值具有可比性。本文所研究的三种化合物具有直接带隙性质,我们的带隙能𝑔值与其他已有的结果一致。所研究的材料表现出对从红外区到非常高能量(~ 33 eV)的电磁辐射的响应。RbGeI 3在低区域能量处的 𝑔值最低,光学响应峰最高,而RbGeI 3在~ 20 eV附近的光学响应峰最高。我们的研究结果表明,这些材料是光电子应用的良好候选者,包括太阳能电池
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A DFT study of structural, electronic and optical properties of Lead-free and Ge based cubic perovskite RbGeX‌3 (X= I, Br and Cl)
The current research uses density functional theory (DFT) approximations in conjunction with the plane wave-pseudopotential method to investigate structural, electronic, and optical properties of Pb-free cubic perovskite RbGeX 3 (X= I, Br and Cl) materials. More specifically, Norm-conserving pseudopotential has been employed to describe the ion and valence electrons interaction, and GGA-PBE flavor is used to represent the exchange-correlation part of the energy of the GGA approximation. Lattice parameters obtained are 5.95, 5.55, and 5.29 Å for RbGeX 3 (where X=I, Br, and Cl), respectively, and they are comparable with available empirical and other values. The direct band gap nature of the three compounds under research here is shown and our values of the band gap energy 𝐸 𝑔 are agree with the other available results. Materials under research show responses to electromagnetic radiation starting from the infrared region to very high energies ( ~ 33 eV). The RbGeI 3 has the lowest 𝐸 𝑔 value at the low region energies and the highest optical response peaks but RbGeCl 3 has the highest optical response peaks at energies located near ~ 20 eV. Our results show that these materials are good candidates for photo electronic applications including solar cells
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CiteScore
0.50
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0.00%
发文量
23
审稿时长
12 weeks
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