用量子点沟道（QDC）-量子点栅极（QDG）FET制备多位SRAM

Q4 Engineering International Journal of High Speed Electronics and Systems Pub Date : 2023-07-20 DOI:10.1142/s0129156423500179

R. Gudlavalleti, Jacques Goosen, Tao Liu, Hunter Bradley, Elisa Parent, Abdulmajeed Almalki, Erik Perez, F. Jain

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引用次数: 0

摘要

本文介绍了在驱动器、负载和存取晶体管的沟道和栅极区域中结合SiOx包层Si量子点的多态反相器的制造。给出了在具有Si量子点的量子点沟道（QDC）-量子点栅极（QDG）FET中表现出三态行为的实验特性。结果表明，基于QDC-QDG-FET的增强型反相器配置是多位静态随机存取存储器（SRAM）的构建块。呈现四种状态的QDC QDG FET也可用于实现紧凑的四态逻辑和非易失性存储器或随机存取非易失存储器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of Multi-Bit SRAMs Using Quantum Dot Channel (QDC)-Quantum Dot Gate (QDG) FET

This paper presents fabrication of multi-state inverters incorporating SiOx-cladded Si quantum dot in the channel and gate region of driver, load, and access transistors. Experimental characteristics are presented exhibiting 3-state behavior in Quantum-dot Channel (QDC)-Quantum-dot Gate (QDG) FETs having Si quantum dots. It is shown that QDC-QDG-FETs-based enhancement mode inverter configurations are the building blocks of a multi-bit static random access memory (SRAM). QDC-QDG-FETs exhibiting four states can also be used to implement compact 4-state logic and nonvolatile memories or random access nonvolatile memories.

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来源期刊

International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.60

自引率

0.00%

发文量

期刊介绍： Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.