N、s共掺杂是否能提高石墨烯与K+离子相互作用的电子性能?

Q3 Chemistry Molekul Pub Date : 2023-03-20 DOI:10.20884/1.jm.2023.18.1.7077
Y. Hidayat, F. Rahmawati, K. Nugrahaningtyas, Abduro’uf Althof Abiyyi
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引用次数: 0

摘要

石墨烯中的缺陷改变了其结构、电学特性以及与K+离子的相互作用。利用DFTB技术有效地探索了缺口缺陷石墨烯和N, S共掺缺口石墨烯的相关特性。距离对于带隙的打开是必不可少的。掺杂剂显著提高了石墨烯的态密度(DOS)强度,改变了石墨烯的特征带。在电荷密度等值面上可以看到掺杂引起的密度损耗。由于掺杂剂平衡了K+离子的电荷,因此该离子更倾向于被掺杂剂吸附在间隙石墨烯上。
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Does Divacancy Defect Combine with N,S-Codoping Enhance the Electronic Properties of Graphene to Its Interaction with K+ Ion?
Defects in graphene alter its structure, electrical characteristics, and interaction with  K+ ions. The related characteristics of divacancy defect graphene and N, S codoped divacancy graphene were effectively explored using the DFTB technique. Divacancy is essential for the band gap opening. The dopants considerably enhance the density of state (DOS) intensity and alter the graphene-character bands. The depletion of density caused by the dopant is seen on the charge density isosurface. Because the charge of the K+ ion is balanced by the dopant, the ion prefers to be adsorbed on divacancy graphene with dopants.
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来源期刊
Molekul
Molekul Chemistry-Chemistry (all)
CiteScore
1.30
自引率
0.00%
发文量
31
审稿时长
4 weeks
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