全光自旋电子存储器的研究进展

IF 0.8 4区 综合性期刊 Q3 MULTIDISCIPLINARY SCIENCES Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-05-15 DOI:10.1007/s40010-023-00822-2
Chandrima Banerjee, Anjan Barman
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摘要

自旋电子学的研究旨在通过研究电子的自旋度来提高现有的存储和计算技术。飞秒光脉冲的使用是相关的,它已被证明可以触发物质磁性状态的最快变化,从而导致高速和高能效的光自旋电子存储器的可能性。在过去的十年中,对不同材料的超快光磁控制的前景进行了探索,导致了全光磁化开关的发现,这在技术上显示了应用前景,并提高了对超短时间尺度上光自旋相互作用的基本认识。本文综述了光学磁化控制的最新进展、进展和新兴研究方向,重点介绍了瞬态非平衡状态下光学磁化控制的物理过程。最后,我们概述了全光磁化开关与磁随机存取存储器和其他存储应用集成的潜力,作为最小耗散和最快的磁写入方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Advances in All Optical Spintronic Memory

The research in spintronics aims to advance the present memory and computation technology by engaging the spin degree of electron. The use of femtosecond optical pulses is relevant, which has shown to trigger the fastest changes in the magnetic state of matter, leading to the possibility of high speed and energy efficient opto-spintronic memory. In the past decade, the prospects of ultrafast opto-magnetic control in different materials were explored, leading to the discovery of all optical switching of magnetization, which showed promise for applications in technology as well as improved the fundamental understanding of light–spin interaction on ultrashort timescale. In this review, we presented the recent developments, advances and emerging research directions in optical control of magnetization, with an emphasis on the qualitative understanding of the physical processes involved under transient nonequilibrium state. Finally, we outlined the potential of integration of all optical magnetization switching with magnetic random access memory and other memory applications as least-dissipative and fastest method for magnetic writing.

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来源期刊
CiteScore
2.60
自引率
0.00%
发文量
37
审稿时长
>12 weeks
期刊介绍: To promote research in all the branches of Science & Technology; and disseminate the knowledge and advancements in Science & Technology
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