富锌(Mg,Zn)O薄膜在不同表面取向MgO衬底上的外延生长

IF 1.6 4区 化学 Q4 CHEMISTRY, PHYSICAL Surface and Interface Analysis Pub Date : 2023-05-15 DOI:10.1002/sia.7236
Tielong Deng, Zekai Chen, Yaping Li, Biwen Zhang, Huiqiong Wang, Jia‐Ou Wang, Rui Wu, H. Zhan, Junyong Kang
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引用次数: 0

摘要

采用氧等离子体辅助分子束外延技术,在不同表面结构的MgO衬底上制备了不同生长取向的(Mg,Zn)O薄膜。X射线衍射(XRD)表明,当衬底模板由MgO(111)变为MgO(011),再变为MgO(001)时,(Mg,Zn)O薄膜的晶体取向由极性c平面(0001)转变为双对称倾斜平面,再转变为非极性m平面(10-10)。此外,用原子力显微镜观察了表面形貌和膜的粗糙度。有趣的是,通过基于同步加速器的X射线吸收光谱分析,这三种薄膜的电子结构表现出取向依赖的特征。此外,所有(Mg,Zn)O薄膜都具有高的透光率(超过85%,400-800 nm)和大的能隙(约3.33 eV)。我们对衬底影响薄膜特性的系统研究展示了一种使用具有不同晶体取向的相同衬底来裁剪薄膜的方法。
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Epitaxial growth of Zn‐rich (Mg,Zn)O thin films on MgO substrates with different surface orientations
(Mg,Zn)O films with various growth orientations were prepared on the MgO substrates with different surface structures using oxygen plasma‐assisted molecular beam epitaxy. X‐ray diffraction (XRD) revealed that the crystallographic orientation of (Mg,Zn)O thin films transforms from the polar c‐plane (0001) to a two‐fold‐symmetry inclined plane and then to the nonpolar m‐plane (10–10) as the substrate template changes from MgO(111) to MgO(011) and then to MgO(001). In addition, the surface topography and film roughness were monitored by atomic force microscopy. Interestingly, the electronic structures of the three films exhibited orientation‐dependent features, as revealed by synchrotron‐based X‐ray absorption spectroscopy. In addition, all of the (Mg,Zn)O thin films showed high optical transmittance (over 85%, 400–800 nm) and large energy gaps (around 3.33 eV). Our systematic study of the substrate‐influenced film characteristics demonstrates a method of tailoring thin films using the same substrate with different crystallographic orientations.
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来源期刊
Surface and Interface Analysis
Surface and Interface Analysis 化学-物理化学
CiteScore
3.30
自引率
5.90%
发文量
130
审稿时长
4.4 months
期刊介绍: Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).
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