Mg-Cu-Co-Dy铁氧体及其与石墨烯纳米片(GNP)复合材料的合成与表征

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2022-07-31 DOI:10.15251/jor.2022.184.539
M. Akhtar, G. Hussain, M. Yusuf, N. Amin, M. Arshad
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引用次数: 0

摘要

采用溶胶-凝胶法制备了纳米尖晶石铁素体mg0.5 cu0.25 co0.25 fe1.97 dy0.030 o4 (mccd -铁素体)及其与石墨烯纳米片(GNP分别为0.0%、1.25%、2.5%、3.75%、5%)的复合材料,并在850℃下烧结5 h。通过x射线衍射、电学、光学、电介质和磁性等方面的测量,分析了铁氧体纳米颗粒包裹石墨烯的影响。晶粒尺寸在27.62 ~ 41.46 (nm)之间。光带隙在3.50 ~ 2.88 eV范围内。在室温(RT)下,测量了介电损耗在8 Hz和8 MHz之间。对材料的磁性进行了测量和计算。mcdf - gnp复合纳米颗粒的磁性能随着饱和磁化强度(Ms)的增加而提高。这种材料可用于湿度传感器、天线和微存储器芯片。
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Synthesis and characterizations of Mg-Cu-Co-Dy ferrites and their composites with graphene nanoplatelets (GNP)
Nanocrystalline spinel ferrite Mg0.5Cu0.25Co0.25Fe1.97Dy0.03O4 (MCCD-ferrites) and their composites with graphene nanoplatelets (GNP =0.0%, 1.25% 2.5%, 3.75%, 5%) were prepared by sol-gel technique and sintered at 850 oC for 5 hours. Measurements in the areas of X-ray diffraction, electrical, optical, dielectric and magnetic properties were used to analyze the effects of the inclusion of graphene with ferrite nanoparticles. The crystallite size was determined in the range of 27.62 – 41.46 (nm). The optical bandgap was found in the range of 3.50 eV to 2.88 eV. The dielectric loss was measured between 8 Hz and 8 MHz at room temperature (RT). Magnetic characteristics of the materials are measured and calculated. The magnetic performances of MCCDF-GNP Composites nanoparticles are improved with an increase in saturation (Ms) magnetization. This material can be utilized for humidity sensors, antennae, and micro memory chips.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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