准零维卤化物钙钛矿衍生物:合成、现状和机遇

IF 1.9 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers in electronics Pub Date : 2021-10-11 DOI:10.3389/felec.2021.758603
V. Trifiletti, Ceyla Asker, G. Tseberlidis, S. Riva, K. Zhao, Weidong Tang, S. Binetti, O. Fenwick
{"title":"准零维卤化物钙钛矿衍生物:合成、现状和机遇","authors":"V. Trifiletti, Ceyla Asker, G. Tseberlidis, S. Riva, K. Zhao, Weidong Tang, S. Binetti, O. Fenwick","doi":"10.3389/felec.2021.758603","DOIUrl":null,"url":null,"abstract":"In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2021-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity\",\"authors\":\"V. Trifiletti, Ceyla Asker, G. Tseberlidis, S. Riva, K. Zhao, Weidong Tang, S. Binetti, O. Fenwick\",\"doi\":\"10.3389/felec.2021.758603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.\",\"PeriodicalId\":73081,\"journal\":{\"name\":\"Frontiers in electronics\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2021-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers in electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3389/felec.2021.758603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers in electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3389/felec.2021.758603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4

摘要

近几十年来,许多技术进步都是由纳米级现象实现的,从而产生了纳米技术领域。特别是,独特的光学和电子现象发生在小于10纳米的长度尺度上,这使得新的应用成为可能。卤化物钙钛矿一直是其光电性能研究的焦点,并在光伏器件和后来的其他光电技术(如激光器和发光二极管)中展示了令人印象深刻的性能。研究最多的晶体形式是三维的,但是,最近,对低维衍生物的探索使得新的子类卤化物钙钛矿材料具有不同的性能。在这些材料中,负责电子性能的低维金属卤化物结构被(通常是有机的)阳离子分开并相互部分绝缘。约束发生在晶格水平上,使块状或薄膜材料保持一定程度的低维特性。特别是,准零维钙钛矿衍生物被证明具有独特的电子、吸收和光致发光性质。他们正在探索光电以外的各种技术(如热电、激光、光电探测器、忆阻器、电容器、led)。本综述以跨学科的方式汇集了这些零维材料的最新文献,可以促进这些化合物的应用。本文涵盖了合成方法、电学、光学和化学性质、应用进展以及作为未来电子器件候选者需要克服的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity
In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A new e-health cloud-based system for cardiovascular risk assessment EMI challenges in modern power electronic-based converters: recent advances and mitigation techniques Two-dimensional semiconductors based field-effect transistors: review of major milestones and challenges Measurement and analysis of the electromagnetic environment in 500 kV back-to-back converter stations Editorial: Re-electrification technology and application of the energy consumption terminal
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1