用LV-PSE在TiO2上沉积MAPbI3用于光伏应用

IF 1.9 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers in electronics Pub Date : 2021-09-24 DOI:10.3389/felec.2021.726171
E. Smecca, A. Jena, I. Deretzis, S. Valastro, S. Sanzaro, G. Mannino, C. Bongiorno, A. La Magna, T. Miyasaka, A. Alberti
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引用次数: 1

摘要

杂化钙钛矿是当今最受欢迎的材料之一,因为它们具有非常独特的性能。为了降低成本、复杂性和对环境的影响,在这项工作中,我们通过两步低真空邻近空间积液(LV-PSE)制备了甲基碘化铅(MAPbI3)薄膜。LV-PSE方法利用前驱体源的低真空和短扩散路径,使靠近衬底的升华物质具有高的热能和分压。为此,在低真空室中,衬底与熔体保持中等距离(~ 2 cm),温度为~ 4 × 10−2毫巴。在第一步中,将PbI2薄膜沉积在衬底上;第二步,通过甲基碘化铵(MAI)试剂的蒸发,通过吸附-结合-迁移机制转化为MAPbI3。为了开发转化反应的潜力,在TiO2衬底上沉积了190 nm的MAPbI3层。通过x射线衍射(XRD)分析表征了这些层的晶体结构,结果表明MAPbI3的存在证实了PbI2薄膜的完全转化。扫描电子显微镜(SEM)分析显示,衬底具有平坦均匀的无针孔覆盖层和TiO2衬底具有良好的构象覆盖层。透射电子显微镜(TEM)分析了薄膜中四方相的形成和非晶相的缺失。利用椭圆偏振光谱(SE)分析了MAPbI3层在不同温度和环境条件下的光学性质和稳定性。作为概念验证,利用TiO2作为电子传输层(ETL), Spiro-OMeTAD作为空穴传输层(HTL), Au作为触点制备了太阳能电池结构,以开发新的可扩展且清洁的沉积方法。仅使用~ 190 nm厚的层,该架构的最佳效率为6.30%。
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MAPbI3 Deposition by LV-PSE on TiO2 for Photovoltaic Application
Hybrid perovskites are one of the most popular materials nowadays due to their very exclusive properties. To mitigate costs, complexity, and environmental impact, in this work, we have prepared methylammonium lead iodide (MAPbI3) films by a two-step Low-Vacuum Proximity-Space-Effusion (LV-PSE). The LV-PSE method exploits the low vacuum and the short diffusion path from the precursor source to have high thermal energy and partial pressure of the sublimated species close to the substrate. To this aim, the substrate is located at a medium distance (∼2 cm) from the melting pots in a low-vacuum chamber at ∼4 × 10−2 mbar. In the first step, a PbI2 film is deposited on a substrate; in the second step, the conversion into MAPbI3 occurs via an adsorption-incorporation-migration mechanism through the evaporation of methylammonium iodide (MAI) reagents. To exploit the potential of the conversion reaction, 190 nm MAPbI3 layers are deposited on TiO2 substrates. The layers were characterized in terms of crystal structure by X-ray diffraction (XRD) analyses, which showed the exclusive presence of MAPbI3 confirming the complete conversion of the PbI2 film. Scanning Electron Microscopy (SEM) analyses revealed a flat uniform pinhole-free coverage of the substrates and good conformational coverage of the TiO2 underlayer. Transmission Electron Microscopy (TEM) analyses addressed the formation of the tetragonal phase and the absence of the amorphous phase in the film. Spectroscopic ellipsometry (SE) analyses were used to explore the optical properties and the stability of the MAPbI3 layer at different temperatures and ambient conditions. As proof of concept, solar cell architectures were prepared using TiO2 as Electron Transporting Layer (ETL), Spiro-OMeTAD as Hole Transporting Layer (HTL), and Au as a contact to exploit the new up-scalable and clean deposition method. Using just ∼190 nm thick layers, the best efficiency reached with this architecture was 6.30%.
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