Study on precision dicing process of SiC wafer with diamond dicing blades

An innovative method for high-speed micro-dicing of SiC has been proposed using two types of diamond dicing blades, a resin-bonded dicing blade and a metal-bonded dicing blade. The experimental research investigated the radial wear of the dicing blade, the maximum spindle current, the surface morphology of the SiC die, the number of chips longer than 10 µm, and the chipped area, which depend on the dicing process parameters such as spindle speed, feed speed, and cutting depth. The chipping fractures in the SiC had obvious brittle fracture characteristics. The performance of the metal-bonded dicing blade was inferior to that of the resin-bonded dicing blade. The cutting depth has the greatest influence on the radial wear of the dicing blade, the maximum spindle current, and the damage to the SiC wafer. The next most important parameter is the feed speed. The parameter with the least influence is the spindle speed. The main factor affecting the dicing quality is blade vibration caused by spindle vibration. The optimal SiC dicing was for a resin-bonded dicing blade with a spindle speed of 20 000 rpm, a feed speed of 4 mm/s, and a cutting depth of 0.1 mm. To improve dicing quality and tool performance, spindle vibrations should be reduced. This approach may enable high-speed dicing of SiC wafers with less dicing damage.