Fuliang Wang , Xi He , Bo Wu , Qingyu Li , Qibin Niu , Kai Niu , Wenhao Yao
{"title":"4,6-二甲基-2-巯基嘧啶减轻硅通孔填充中铜突出的参数分析及电化学性能","authors":"Fuliang Wang , Xi He , Bo Wu , Qingyu Li , Qibin Niu , Kai Niu , Wenhao Yao","doi":"10.1016/j.mee.2023.112056","DOIUrl":null,"url":null,"abstract":"<div><p>Through silicon<span><span> via (TSV) is the core technology that implements three-dimensional (3D) integrated packaging in integrated circuits. Electrodeposition<span> defects affect the reliability of TSVs. In particular, the surface Cu protrusions can lead to structural deformations, which significantly affect the reliability of TSVs. In this study, 4,6-Dimethyl-2-mercaptopyrimidine (DMP) is studied as a leveller additive for TSV electroplating, along with the effect of the </span></span>deposition parameters<span><span> on the TSV filling process and surface morphology. To evaluate the filling performance of DMP, linear sweep </span>voltammetry (LSV) is performed to investigate how the additives affect the filling mechanism. Finally, the conditions of this levelling agent in TSV plating are predicted based on LSV curves and validated using plating experiments.</span></span></p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Parameter analysis and electrochemical properties of 4,6-Dimethyl-2-mercaptopyrimidine for mitigating Cu prominence in through silicon vias filling\",\"authors\":\"Fuliang Wang , Xi He , Bo Wu , Qingyu Li , Qibin Niu , Kai Niu , Wenhao Yao\",\"doi\":\"10.1016/j.mee.2023.112056\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Through silicon<span><span> via (TSV) is the core technology that implements three-dimensional (3D) integrated packaging in integrated circuits. Electrodeposition<span> defects affect the reliability of TSVs. In particular, the surface Cu protrusions can lead to structural deformations, which significantly affect the reliability of TSVs. In this study, 4,6-Dimethyl-2-mercaptopyrimidine (DMP) is studied as a leveller additive for TSV electroplating, along with the effect of the </span></span>deposition parameters<span><span> on the TSV filling process and surface morphology. To evaluate the filling performance of DMP, linear sweep </span>voltammetry (LSV) is performed to investigate how the additives affect the filling mechanism. Finally, the conditions of this levelling agent in TSV plating are predicted based on LSV curves and validated using plating experiments.</span></span></p></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2023-08-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931723001211\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931723001211","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Parameter analysis and electrochemical properties of 4,6-Dimethyl-2-mercaptopyrimidine for mitigating Cu prominence in through silicon vias filling
Through silicon via (TSV) is the core technology that implements three-dimensional (3D) integrated packaging in integrated circuits. Electrodeposition defects affect the reliability of TSVs. In particular, the surface Cu protrusions can lead to structural deformations, which significantly affect the reliability of TSVs. In this study, 4,6-Dimethyl-2-mercaptopyrimidine (DMP) is studied as a leveller additive for TSV electroplating, along with the effect of the deposition parameters on the TSV filling process and surface morphology. To evaluate the filling performance of DMP, linear sweep voltammetry (LSV) is performed to investigate how the additives affect the filling mechanism. Finally, the conditions of this levelling agent in TSV plating are predicted based on LSV curves and validated using plating experiments.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.