不同超声辅助程度对Cu/Zn+15%SAC0307+15%Cu/Al接头性能的影响

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2023-03-07 DOI:10.1108/mi-08-2022-0154
Tian Huang, Gui-Sheng Gan, Cong Liu, P. Ma, Yongchong Ma, Zheng Tang, Dayong Cheng, Xin Liu, Kun Tian
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引用次数: 0

摘要

目的研究不同超声辅助加载程度对Cu/Zn+15%SAC0307+15%Cu/Al焊点组织、力学性能和断口形貌的影响。设计/方法论/方法一种新方法,其中45 μm Zn颗粒与15%500混合 纳米Cu颗粒和15%500 纳米SAC0307粒子作为焊料(SACZ)和五种不同的超声加载程度,实现了Cu和Al在240 °C和8 MPa。然后,利用扫描电镜对焊缝、界面微观结构和断口形貌进行了观察和分析;通过EDS测定结构组成;用XRD对焊缝相进行了表征;并采用PTR-1102粘合测试仪来测试平均剪切强度。结果表明,在Cu/SACZ/Al接头的Al侧形成了Al–Zn固溶体,而界面IMC(Cu5Zn8)则形成在Cu/SACCZ/Al的Cu侧。单超声波钎焊时,界面IMC(Cu5Zn8)随着超声波度的增加而逐渐增厚。观察到,随着超声度的变化,焊料中Zn或ZnO区域的比例降低,Cu–Zn化合物区域的比例增加。接头最大抗剪强度达到46.01 当双超声度为60°时,MPa。接头的断裂位置从Al侧界面逐渐向焊料转移,然后向Cu侧界面转移。原创性/价值进一步研究了超声对微纳米颗粒的作用机制。通过使用不同的超声加载程度来实现Cu/Al焊接,相信本研究所获得的理解可以为开发异质材料的低温焊接方法提供一些新的见解。
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Properties of Cu/Zn+15%SAC0307+15%Cu/Al joints by different ultrasonic-assisted degrees
Purpose This paper aims to investigate the effects of different ultrasonic-assisted loading degrees on the microstructure, mechanical properties and the fracture morphology of Cu/Zn+15%SAC0307+15%Cu/Al solder joints. Design/methodology/approach A new method in which 45 μm Zn particles were mixed with 15% 500 nm Cu particles and 15% 500 nm SAC0307 particles as solders (SACZ) and five different ultrasonic loading degrees were applied for realizing the soldering between Cu and Al at 240 °C and 8 MPa. Then, SEM was used to observe and analyze the soldering seam, interface microstructure and fracture morphology; the structural composition was determined by EDS; the phase of the soldering seam was characterized by XRD; and a PTR-1102 bonding tester was adopted to test the average shear strength. Findings The results manifest that Al–Zn solid solution is formed on the Al side of the Cu/SACZ/Al joints, while the interface IMC (Cu5Zn8) is formed on the Cu side of the Cu/SACZ/Al joints. When single ultrasonic was used in soldering, the interface IMC (Cu5Zn8) gradually thickens with the increase of ultrasonic degree. It is observed that the proportion of Zn or ZnO areas in solders decreases, and the proportion of Cu–Zn compound areas increases with the variation of ultrasonic degree. The maximum shear strength of joint reaches 46.01 MPa when the dual ultrasonic degree is 60°. The fracture position of the joint gradually shifts from the Al side interface to the solders and then to the Cu side interface. Originality/value The mechanism of ultrasonic action on micro-nanoparticles is further studied. By using different ultrasonic loading degrees to realize Cu/Al soldering, it is believed that the understandings gained in this study may offer some new insights for the development of low-temperature soldering methodology for heterogeneous materials.
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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