降低三相光伏逆变器损耗的新型脉宽调制技术

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2018-08-27 DOI:10.1155/2018/4157614
M. Mnati, D. Bozalakov, A. Van den Bossche
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引用次数: 7

摘要

如今,大多数三相“现成”逆变器在直流母线上使用电解电容器来提供短期储能。然而,这对逆变器的寿命和光伏系统的总成本有直接影响。本文提出了一种新的控制策略,称为120°总线箝位PWM(120BCM)。120BCM对直流总线进行调制,并使用较小的直流总线电容器值,这是薄膜电容器的典型值。因此,逆变器的寿命可以增加到光伏面板的工作寿命。因此,光伏系统的总拥有成本将显著降低。此外,所提出的120BCM控制策略通过仅使用一个支路来执行调制,一次仅调制一个相电流。结果,开关损耗显著降低。本文设计并介绍了完整的系统设置,并取得了一些实际效果。
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New Pulse Width Modulation Technique to Reduce Losses for Three-Phase Photovoltaic Inverters
Nowadays, most three-phase, “off the shelf” inverters use electrolytic capacitors at the DC bus to provide short term energy storage. However, this has a direct impact on inverter lifetime and the total cost of the photovoltaic system. This article proposes a novel control strategy called a 120° bus clamped PWM (120BCM). The 120BCM modulates the DC bus and uses a smaller DC bus capacitor value, which is typical for film capacitors. Hence, the inverter lifetime can be increased up to the operational lifetime of the photovoltaic panels. Thus, the total cost of ownership of the PV system will decrease significantly. Furthermore, the proposed 120BCM control strategy modulates only one phase current at a time by using only one leg to perform the modulation. As a result, switching losses are significantly reduced. The full system setup is designed and presented in this paper with some practical results.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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