MOS晶体管中差分有效迁移率的新概念

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2019-03-05 DOI:10.1155/2019/5716230

K. Bennamane, G. Ghibaudo

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引用次数: 2

摘要

提出了差分有效迁移率的新概念。它表征了由于MOSFET通道中反转电荷的少量增加而导致的漏极电流增量的有效迁移率。它使我们能够证明有效迁移率可以用局部电场方法来描述，而不是完全用有效电场模型来描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Concept of Differential Effective Mobility in MOS Transistors

A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.