低衬底温度下超声喷雾热解法制备Cu2ZnSnS4(CZTS)薄膜及其锡浓度对薄膜性能的影响

M. Sultana, A. Siddika, SS Mahmood, A. Sharmin, S. Tabassum, M. Rahman, M. Bashar
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引用次数: 0

摘要

本研究采用喷雾热解法在玻璃衬底上制备了不同Sn含量的Cu2ZnSnS4(CZTS)薄膜。所有的CZTS薄膜都是在200°C的衬底温度下制造的,以最大限度地减少二次相的形成。在这里,我们展示了锡含量浓度的变化如何影响CZTS薄膜的光学和结构性能。XRD图谱表明,在固定的衬底温度下,必须优化Sn含量的浓度,以最大限度地减少二次相的形成。反过来,CZTS薄膜的带隙在很大程度上受到二次相形成的影响。我们发现,由Sn含量为1.8mM的前体溶液制备的薄膜具有最佳的晶体结构和1.55eV的光学带隙。CZTS薄膜也具有良好的载流子浓度,范围为4.2×1019至22.9×1020cm-3 Bangladesh J.Sci。Ind.Res.57(1),1-62022
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Fabrication of Cu2ZnSnS4 (CZTS) thin films by ultrasonic spray pyrolysis at a low substrate temperature and effect of tin concentration on the characteristics of the CZTS thin films
Cu2ZnSnS4 (CZTS) thin films are fabricated on glass substrates using the spray pyrolysis method with different concentrations of Sn content were studied in this research work. All the CZTS thin films are fabricated at substrate temperature 200°C to minimize the formation of secondary phases. Here, we show how the variation in Sn content concentration influences the optical and structural properties of the CZTS thin films. The XRD patterns reveal that the concentration of Sn content has to be optimized to minimize the formation of secondary phases for a fixed substrate temperature. In turn, the band gap of the CZTS films is highly influenced by the formation of secondary phases. We have found that the films prepared from the precursor solution with 1.8 mM concentration of Sn content have the best crystal structure and an optical band gap of 1.55 eV. The CZTS thin films also have good carrier concentrations ranging from 4.2×1019 to 22.9×1020 cm-3. Bangladesh J. Sci. Ind. Res. 57(1), 1-6, 2022
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