盐酸表面处理克服二硫化钼湿度传感器响应不稳定性

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2023-09-01 DOI:10.1016/j.mne.2023.100216
Maria Kainourgiaki, Menelaos Tsigkourakos, Evangelos Skotadis, Evangelos Aslanidis, Dimitris Tsoukalas
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引用次数: 1

摘要

与使用不同前体的其他CVD方法相比,使用钼酸钠(Na2MoO4)作为Mo前体的化学气相沉积(CVD)合成MoS2会产生大量大薄片(~100-300μm)。在这项工作中,开发了基于MoS2的湿度传感器,从而使用这种水溶液形式的Mo前体生长MoS2。由于表面存在Na2MoO4残留物,最终设备在高(>;50%)相对湿度条件下运行时表现出响应切换。通过在CVD过程中降低水性Mo前体的浓度,我们部分减少了切换效应,因为Na2MoO4残留物减少了。为了完全克服这个问题,我们提出了一种使用盐酸的制造后表面处理,该处理可以去除器件表面的Na2MoO4残留物。用HCl溶液冲洗设备可以消除响应切换效应,并且传感器在初始操作步骤中表现出恒定的正响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Overcoming the response instability of MoS2 humidity sensors by hydrochloric acid surface treatment

The synthesis of MoS2 with chemical vapor deposition (CVD) using sodium molybdate (Na2MoO4) as the Mo precursor produces a big number of large flakes (∼100-300 μm) compared to other CVD methods that use different precursors. In this work, humidity sensors based on MoS2 are developed, whereby MoS2 is grown using this Mo precursor in an aqueous solution form. The final devices exhibit a response-switching during operation under high (>50%) relative humidity conditions, due to the presence of Na2MoO4 residues on their surface. By decreasing the concentration of the aqueous Mo precursor during the CVD process we partially diminish the switching effect, as the Na2MoO4 residue is reduced To completely overcome this issue, we present a post-fabrication surface treatment using hydrochloric acid that removes the Na2MoO4 residue from the devices' surface. Rinsing the devices with an HCl solution results in the elimination of the response-switching effect and the sensors demonstrate a constant positive response from the initial operation steps.

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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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