H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun
{"title":"双InGaAs/InAs通道对inp基hemt直流和射频性能的影响","authors":"H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun","doi":"10.15251/jor.2022.183.411","DOIUrl":null,"url":null,"abstract":"The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs\",\"authors\":\"H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun\",\"doi\":\"10.15251/jor.2022.183.411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.\",\"PeriodicalId\":54394,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2022.183.411\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2022.183.411","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs
The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
期刊介绍：
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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