{"title":"Cr Kα激发下Si, SiO2, SiN, SiC和聚二甲基硅氧烷的HAXPES参考光谱","authors":"Dong Zheng, C. N. Young, W. Stickle","doi":"10.1116/6.0002660","DOIUrl":null,"url":null,"abstract":"Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"HAXPES reference spectra of Si, SiO2, SiN, SiC, and poly(dimethyl siloxane) with Cr Kα excitation\",\"authors\":\"Dong Zheng, C. N. Young, W. Stickle\",\"doi\":\"10.1116/6.0002660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.\",\"PeriodicalId\":22006,\"journal\":{\"name\":\"Surface Science Spectra\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Science Spectra\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0002660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Spectra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0002660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
HAXPES reference spectra of Si, SiO2, SiN, SiC, and poly(dimethyl siloxane) with Cr Kα excitation
Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
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