Ju Won Kim, Jin Gi An, Guen Hyung Oh, Joo Hyung Park, TaeWan Kim
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Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing
Molybdenum disulfide (MoS2) grown via metal-organic chemical vapor deposition is known to exhibit high transparency and superior quality. Transparent thin-film transistor (TFT) based on a multilayer MoS2 film and indium zinc oxide (IZO) using a representative transparent conducting oxide as source and drain electrodes indicate more than 70% transmittance in the visible wavelength. However, the device performance is limited by the large Schottky barrier height corresponding to the high work function of IZO (~ 5.1 eV) and surface impurities generated during the wet transfer process and subsequent oxidation. In this study, we addressed this problem by employing air thermal annealing to improve the TFT device performance. Consequently, contact resistance is reduced ~ 10 times, and the field-effect mobility and on/off ratio measured using ion-gel side gate, which are important parameters for TFT device operation, were enhanced by ~ 59 and ~ 81 times, respectively.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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