4H-SiC中子反应诱导的少数载流子陷阱

Q4 Physics and Astronomy Defect and Diffusion Forum Pub Date : 2023-06-06 DOI:10.4028/p-724d7y

M. Belanche, M. E. Bathen, Piyush Kumar, C. Dorfer, C. Martinella, U. Grossner

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引用次数: 0

摘要

本文在20 ~ 660 K的温度范围内，利用MCTS技术对外延型n型4H-SiC高通量中子辐照后的少数载流子陷阱进行了表征。报道了三个少数载流子陷阱能级，标记为X, B和Y，其活化能由Arrhenius分析估计，其中B能级分配给取代硼(BSi)。通过连续温度扫描研究了陷阱能级的动态行为。

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Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC

This work presents the characterization of minority carrier traps in epitaxial n-type 4H-SiC after high fluence neutron irradiation using minority carrier transient spectroscopy (MCTS) in a temperature range of 20 K to 660 K. Three minority carrier trap levels are reported, labelled as X, B and Y, whose activation energies were estimated by Arrhenius analysis and where the B level is assigned to substitutional boron (BSi). The dynamic behaviour of the trap levels was studied by consecutive temperature scans.

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来源期刊

Defect and Diffusion Forum Physics and Astronomy-Radiation

CiteScore

1.20

自引率

0.00%

发文量

127

期刊介绍： Defect and Diffusion Forum (formerly Part A of ''''Diffusion and Defect Data'''') is designed for publication of up-to-date scientific research and applied aspects in the area of formation and dissemination of defects in solid materials, including the phenomena of diffusion. In addition to the traditional topic of mass diffusion, the journal is open to papers from the area of heat transfer in solids, liquids and gases, materials and substances. All papers are peer-reviewed and edited. Members of Editorial Boards and Associate Editors are invited to submit papers for publication in “Defect and Diffusion Forum” . Authors retain the right to publish an extended and significantly updated version in another periodical.